JPS61214513A - Processing device - Google Patents

Abstract

PURPOSE:To enable to fully correspond to the large-sized material to be processed by a method wherein the processing chamber, which constitutes a chemical vapor deposition (CVD) device, is composed of a susceptor of an overhang beam structure having a plurality of stages and a movable body consisting of a reaction gas feeder, which performs an additional function as an electrode, and of the similar overhang beam structure as above which is inserted between said stages. CONSTITUTION:A supporting frame 6 of overhang beam structure whereon a plurality of susceptors 7 having a heater 9 on the lower side, are arranged horizontally inside one of vertical walls of the processing chamber 1 which constitutes a CVD device, and the aperture part 8 of a wafer 3, which is the material to be treated, are provided on the vertical wall of the supporting frame 6 corresponding to each susceptor. Also, a plurality of overhang beam structured gas feeding passages which perform an additional function as an electrode 11 having a gas blow-out part 15 are provided on the opposing vertical walls of the processing chamber 1, they are supported by a hollow movable member 10, and the member 10 is protruded outside the chamber 1. The titled device is constituted as above, the wafer 3 is placed on the susceptor 7 from the door 5 and the hole 4 where wafers are taken in and out provided on the wall of the chamber 1, reaction gas 14 is fed from the movable member 10, the feeding passage 13 is moved forward to and moved backward from to a point located between the stages of each susceptor 7.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to processing technology, particularly CVD technology, and relates to a process that can be effectively used to form a CVD film on a wafer, for example, in the manufacture of semiconductor devices.

[Background technology]

In the manufacture of semiconductor devices, plasma CVD equipment forms CVD films on wafers by placing multiple wafers on a rotating susceptor and exciting plasma between the susceptor and a flat plate electrode directly above. A conceivable method is one configured to uniformly perform plasma CVD processing on a wafer.

However, in such a plasma CVD apparatus, the susceptor is supported at I6 during rotation and has a cantilever structure, so when the wafer becomes large in diameter,
The inventor of the present invention has revealed that there is a problem in that the susceptor cannot fully support the wafer, and as a result, there is a limit to the ability to cope with the increase in the diameter of the wafer.

There is the following literature.

Journal Op Electrochemical Society 1979 Pol 126 P930-P934 "Deposition of Plasma Silicon Oxide Films in a Production Brain Reactor" by Earl Holahan
Journal Electrche
micalSociety, 1979 Vol., 1
26゜P930~P934 John RHo1l
ahan ”Deposition of Pl
asma 5ilicon Oxide Thi
nFilms in a Production
Planar Reactor''.

[Purpose of the invention]

An object of the present invention is to provide a processing technique that can cope with the increase in the size of objects to be processed.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by holding a plurality of objects to be processed by each of a plurality of susceptors, the structure is configured to be able to sufficiently support even large objects to be processed, and a plurality of electrodes are provided so that they can approach and move away from the susceptors. By doing so, uniformity of each processing state among the objects to be processed and within the objects to be processed can be ensured without moving the objects to be processed.

〔Example〕

FIG. 1 is a front sectional view showing a plasma CVD apparatus which is an embodiment of the present invention, and FIG. 2 is a side sectional view thereof.

In this embodiment, the plasma CVD apparatus includes a processing chamber 1 configured to form an airtight chamber, and an exhaust path 2 for evacuating the interior of the chamber is connected to the processing chamber 1. One side wall of the processing chamber 1 (hereinafter, assumed to be the right side).

) has a plurality of loading/unloading ports 4 arranged in the vertical direction for loading and unloading wafers 3 as objects to be processed, and a door 5 is attached to each loading/unloading port 4 so as to be opened and closed. ing.

A support frame 6 is constructed on the right side of the processing chamber 1 so that the left side is open, and inside the support frame 6 there are a plurality of susceptors 7 formed in a substantially rectangular flat shape, which are arranged vertically. They are arranged at approximately equal intervals and are constructed approximately horizontally. The susceptor 7 is fixed to the support frame 6 at its front and rear ends and right end, and is supported with sufficient rigidity.

The susceptors 7 at each stage are arranged so as to substantially face the loading/unloading port 4 , and the support frame 6 has an opening 8 to enable transfer of the wafer 3 between the loading/unloading port 4 and the susceptor 6 . It has been established.

A heater 9 is disposed under each susceptor 7, and the heater 9 is supported by the support body 6 while ensuring sufficient rigidity like the susceptor 7. Each heater 9 is connected to a susceptor 7
It is configured to be able to heat the wafer 3 placed thereon.

A cypress 10 is supported on the wall of the cypress 1 of the processing chamber 1 so as to be movable in the right direction, and an electrode support 11 is mounted on this movable body 10 in a substantially vertical direction within the processing chamber 1. It is arranged and protrudes integrally. On this support 11, a plurality of electrodes 12 formed in a substantially rectangular flat shape are arranged at substantially equal intervals in the vertical direction and protrude horizontally and integrally.
Each electrode 12 is disposed directly above the susceptor 7 so as to face each other.

A supply channel 13 is integrally formed inside the movable body 10, the support body 11, and the electrode 12, and a reactive gas 14 as a processing gas such as monosilane is supplied to the supply channel 13. ing.

On the bottom surface of each electrode 12°, a large number of air outlets 15 are approximately evenly spaced.
The outlet 15 is arranged to communicate with the supply channel 13, and the blowout port 15 is arranged to communicate with the supply channel 13.
4 is directed downward in a shower-like manner.

A high frequency power source, 16
are electrically connected via a moving body 10 and a support 11, and plasma is generated between the electrode 12 and the susceptor 7 by this power source 16.

Next, the effect will be explained.

The wafer 3 as the object to be processed enters the processing chamber 1 from the loading/unloading port 4.
They are carried into the interior and placed on the susceptor 7 through the opening 8.

By the way, if the susceptor has a cantilever structure, the span must be set long in order to place a large-diameter wafer. This, combined with the increased weight due to the large-diameter susceptor, generates an excessive moment, causing the wafer to The free end side will sag due to insufficient support.

However, in this embodiment, since the susceptor 7 is supported on multiple surfaces, the span that contributes to the moment is set to be substantially short. Therefore, even if the wafer 3 has a large diameter, the susceptor 7 can properly hold the wafer 3 without causing distortion such as bending.

When the processing chamber 1 is kept airtight and the chamber is evacuated by the exhaust path 2, the movable body 10 is moved to the right so that each electrode 12 faces the wafer 3 on each susceptor 7. Further, the wafer 3 on each susceptor 7 is heated by the heater 9.

In this state, a high frequency voltage is applied between the electrode 12 group and the susceptor 7 group, and the reaction gas 14 is blown out from the outlet 15 in a shower shape. At this time,
Since each electrode 12 faces the wafer 3 on each susceptor 7, a uniform plasma atmosphere is formed on each wafer 1, and the reaction gas 14 comes into uniform contact with each wafer 1.

Due to this uniform plasma atmosphere and contact of the reaction gas, the plasma CVD reaction occurs between each wafer.
Moreover, since CVDm occurs uniformly within each wafer, CVDm is uniformly formed on the wafer.

When the film forming process is completed, the movable body 10 is moved to the left, so that the electrode 12 group is layered from above the susceptor 7 group. Thereby, the operation of exchanging processed wafers and unprocessed wafers in the susceptor 7 can be carried out smoothly without being obstructed by the electrodes 12.

〔effect〕

(1) By holding a plurality of objects to be processed in each of a plurality of susceptors, the susceptors can be configured to sufficiently support even large objects. It can be handled without any restrictions.

(2) By providing multiple electrodes so that they can approach and move away from the susceptor, it is possible to ensure the uniformity of each processing state among and within the objects to be processed, without moving the objects. , it is possible to realize the arrangement of a plurality of susceptors in parallel without causing a decrease in uniformity.

(3) While installing the susceptor and electrode horizontally,
By arranging multiple stages in parallel in the vertical direction, the occupied floor space can be suppressed.

(4) By configuring the susceptor side to be fixed and the electrode side to move, it is possible to select a large support rigidity for the susceptor.

(5) By configuring the processing gas to be blown out from the electrode toward the object to be processed, the processing gas can be uniformly brought into contact with the object to be processed, so that the uniformity of the processing can be further improved.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, the susceptor group and the electrode group are not limited to being arranged horizontally, but may be arranged vertically.

The processing gas is not limited to being supplied in a shower form from the electrodes, but may be blown out from a supply path connected to the processing chamber.

The structure for supporting the susceptor is not limited to a structure in which the susceptor is supported by a support frame, but may be configured to be directly supported by the processing chamber.

[Application field]

In the above explanation, the invention made by the present inventor was mainly applied to a Pradamer CVD apparatus, which is the background field of application. can also be applied.

[Brief explanation of drawings]

FIG. 1 is a front sectional view showing a plasma CVD apparatus which is an embodiment of the present invention, and FIG. 2 is a side sectional view thereof. DESCRIPTION OF SYMBOLS 1... Processing chamber, 2... Exhaust path, 3... Wafer (processed object) 4... Inlet/outlet, 5... Door, 6... Support frame, 7... Susceptor, 8... Opening portion, 9... Heater, 10... Moving body, 11... Support body, 12...
- Electrode, 13... Supply channel, 14... Reaction gas (processing gas), 15... Air outlet, 16... High frequency power supply. Figure 1 Figure 2

Claims (1)

[Claims] 1. A processing chamber, a plurality of susceptors arranged substantially parallel to each other in the processing chamber and each formed to hold an object to be processed, and a processing chamber arranged substantially parallel to each susceptor in the processing chamber. It is equipped with multiple electrodes that are arranged in parallel so that
A processing device configured such that the susceptor group and the electrode group move relatively in parallel. 2. The processing apparatus according to claim 1, wherein the susceptor and the electrode are installed horizontally and arranged in multiple stages in the vertical direction. 3. The processing apparatus according to claim 1, wherein the susceptor side is fixed and the electrode side is movable. 4. Claim 1, characterized in that the electrode is configured to blow out the processing gas toward the object to be processed.
Processing equipment described in Section 1.