KR860007719A - Method of processing wave and wave processing device used therein - Google Patents

Method of processing wave and wave processing device used therein Download PDF

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Publication number
KR860007719A
KR860007719A KR1019860000916A KR860000916A KR860007719A KR 860007719 A KR860007719 A KR 860007719A KR 1019860000916 A KR1019860000916 A KR 1019860000916A KR 860000916 A KR860000916 A KR 860000916A KR 860007719 A KR860007719 A KR 860007719A
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KR
South Korea
Prior art keywords
wave
cassette
reaction
gas
cutlet
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Application number
KR1019860000916A
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Korean (ko)
Inventor
아기라 다가마쯔
다게오 요시미
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미쓰다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Publication of KR860007719A publication Critical patent/KR860007719A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

내용 없음No content

Description

웨이파의 처리방법 및 그것에 사용하는 웨이파 처리장치Method of processing wave and wave processing device used therein

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명의 1실시예인 저압 CVD 장치를 도시한 종단면도.1 is a longitudinal sectional view showing a low pressure CVD apparatus as an embodiment of the present invention.

제 2 도는 그의 옆 단면도.2nd degree is his side section.

제 3 도는 그의 카셋트의 분해 사시도.3 is an exploded perspective view of a cassette thereof.

Claims (20)

다수매의 웨이퍼를 동일방향에 세워서 카셋트에 수납하고, 웨이파 주면과 병행한 방향에 반응까스의 흐름을 만들어서 웨이파 주면에 반응까스를 접촉시키면서, 웨이파주면을, 반응까스에 의해서 웨이파처리하는 것을 특징으로 하는 웨이파 처리 방법.A plurality of wafers are placed in the same direction and stored in a cassette, and the wave wave surface is wave treated by the reaction cutlet while making a flow of reaction cutlet in the direction parallel to the main wave surface and contacting the reaction cutlet with the main wave surface. Weipa processing method characterized in that. 특허 청구의 범위 제 1 항에 있어서, 카셋트가 다수 매의 웨이파를 유지하는 본체와, 웨이파를 덮고, 또 다수의 구멍을 가진 카바를 구비하고 있을 것.The cassette according to claim 1, wherein the cassette is provided with a main body holding a plurality of wave waves, and a cover covering the wave waves and having a plurality of holes. 특허 청구의 범위 제 1 항에 있어서, 웨이파를 가열하면서 행한다.The method of claim 1, wherein the wave is heated. 특허청구의 범위 제 1 항에 있어서, 감압하에 있어서 웨이파처리를 행한다.The method of claim 1, wherein the wave treatment is performed under reduced pressure. 특허 청구의 범위 제 1 항에 있어서, 감압 가온하에 있어서 웨이파처리를 행한다.The method according to claim 1, wherein the wave treatment is performed under reduced pressure heating. 특허 청구의 범위제 1 항에 있어서, 반응까스로서는 웨이파에 CVD 막을 형성하기 위한 반응까스이다.The method according to claim 1, wherein the reaction mask is a reaction mask for forming a CVD film on a wave. 특허청구의 범위 제 1 항에 있어서, 반응까스로서는, 웨이파 표면을 드라이엣칭 하기 위한 반응까스이다.The method according to claim 1, wherein the reaction gas is a reaction gas for dry etching the wave surface. 특허 청구의 범위 제 1 항에 있어서, 반응까스로서는, 웨이파표면의 레지스트를 회하하는 레지스트 앗샤용 까스이다.The method according to claim 1, wherein the reaction cut is a resist ash cut which traverses the resist on the wave surface. 처리까스 공급로 및 배기로를 가지는 처리살과, 처리실내에서 자공전하는 다수의 스테지이고, 피처리물인 웨이파를 다수 유지할 수가 있는 카셋트를 얹을 수가 있는 스테지를 구비하고 있는 웨이파 처리장치.A treatment apparatus comprising a treatment tooth having a treatment cutlet supply passage and an exhaust passage, and a stage on which a plurality of stages that autorotate in the treatment chamber and a cassette capable of holding a plurality of cassettes that can hold a plurality of processed target waves can be placed. 카셋트가 웨이파를 유지하는 본체와, 웨이파를 덮고 또 다수의 구멍을 가지는 카바를 구비하고 있는 것을 특징으로 하는 특허 청구의 범위 제 9 항 기재의 웨이파 처리 장치.The method of claim 9, wherein the cassette includes a main body for holding the wave and a cover covering the wave and having a plurality of holes. 처리 까스 공급로가 처리까스를 샤와 상태로 취출하는 헤드에 접속되어 있는 것을 특징으로 하는 특허청구의 범위 제 9 항 기재의 웨이파 처리 장치.The process cut-out supply path is connected to the head which takes out a process cut in the shaw state, The Weipa processing apparatus of Claim 9 characterized by the above-mentioned. 처리까스 공급로 및 배기로 가지는 처리실과, 처리실 내에서 자공전하는 다수의 스테지이고, 웨이퍼를 다수매 유지할 수가 있는 카셋트를 얹을수가 있는 스택지를 구비하고 있는 웨이파 처리 장치이고, 처리실에는, 그의 실내를 감압할 수 있는 감압수단인 진공펌프가 처리실에 구비되어 있는 배기로에 연결되어서 되고 또, 처리실에는 카셋트를 처리실내에 반입하거나, 반출하거나하는 카셋트 반출입수단이 마련되어서 되고, 처리 까그 공급로에는, 스테지에 얹어져야할 카셋트 내의 웨이파 주변에 대해서 병행한 방향에 까스의 흐름 방향의 발생하는 까스 취출구를 다수개 가진 까스 취출헤드가 연결되어서 된것을 특징으로 하는 웨이파 처리 장치A process chamber having a process cutlet supply path and an exhaust gas, and a plurality of stages that autorotate in the process chamber, and a stack capable of placing a cassette capable of holding a plurality of wafers. A vacuum pump, which is a pressure reducing means capable of reducing pressure, is connected to an exhaust path provided in the processing chamber, and a cassette carrying-in / out means for carrying in or taking out a cassette into the processing chamber is provided in the processing chamber. Wafer processing apparatus characterized in that a cutout head having a plurality of cutout outlets in the flow direction of the cutlet is connected to a direction parallel to the periphery of the wave in the cassette to be placed on the stage. 특허청구의 범위 제12항에 있어서, 처리실에는, 그의 실내의 가온하는 가열체가 마련되어 있다.The heating chamber according to claim 12, wherein the heating chamber is provided in the processing chamber. 특허청구의 범위 제12항에 있어서, 처리실에는, 그의 실내의 스테지에 얹어지는 카셋트 수납되어 있는 웨이파를 가열하는 가열체 가 마련되어 있다.The heating chamber according to claim 12, wherein the processing chamber is provided with a heating body for heating a cassette housed in a cassette placed on the staging of the room. 특허청구의 범위 제12항에 있어서, 스테지는, 다수 개 동일 원주상에 이간해서 배치되어 있다.The claim is according to claim 12, wherein a plurality of stages are arranged apart on the same circumference. 특허청구의 범위 제12항에 있어서, 까스취출헤드를 한쪽의 전극으로 하고, 스테지를 다른 쪽의전극으로 하고, 그의 양전극에는 고주파(RF)전원이 인가 되어 있다.The scope according to claim 12, wherein the cutout head is one electrode, the stage is the other electrode, and a high frequency (RF) power source is applied to both electrodes. 특허 청구의 범위 제12항에 있어서, 까스 공급로에 공급되는 까스는, CVD 막을 웨이파에 형성하기 위한 반응 까스이다.The gas supplied to the gas supply passage is a reaction gas for forming a CVD film on the wave. 특허청구의 범위 제12항에 있어서, 까스 공급로에 공급되는 까스는, 푸라즈마 CVD 막을 웨이파에 형성하기 위한 반응까스이다.The method according to claim 12, wherein the gas supplied to the gas supply passage is a reaction gas for forming a plasma CVD film on the wave. 특허청구의 범위 제12항에 있어서, 까스 공급로에 공급되는 까스는, 드라이 엣칭을 웨이파에 실시하기 위한 반응까스이다.The method according to claim 12, wherein the gas supplied to the gas supply passage is a reaction gas for performing dry etching on the wave. 특허청구의 범위 제12항에 있어서, 까스 공급로에 공급되는 까스는, 레지스트 앗샤를 행하는 반응 까스이다.The method according to claim 12, wherein the gas supplied to the gas supply passage is a reaction gas for performing resist ashing. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860000916A 1985-03-20 1986-02-11 Method of processing wave and wave processing device used therein KR860007719A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60054490A JPS61214512A (en) 1985-03-20 1985-03-20 Processing device
JP60-54490 1985-03-20

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Publication Number Publication Date
KR860007719A true KR860007719A (en) 1986-10-15

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KR1019860000916A KR860007719A (en) 1985-03-20 1986-02-11 Method of processing wave and wave processing device used therein

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075630Y2 (en) * 1986-10-24 1995-02-08 株式会社リコー Heat treatment equipment
CN1978074B (en) * 2005-12-02 2010-11-10 鸿富锦精密工业（深圳）有限公司 Lens washing fixture

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