JPS61214476A - 薄膜トランジスタ - Google Patents

薄膜トランジスタ

Info

Publication number
JPS61214476A
JPS61214476A JP60055582A JP5558285A JPS61214476A JP S61214476 A JPS61214476 A JP S61214476A JP 60055582 A JP60055582 A JP 60055582A JP 5558285 A JP5558285 A JP 5558285A JP S61214476 A JPS61214476 A JP S61214476A
Authority
JP
Japan
Prior art keywords
film
source
semiconductor film
amorphous semiconductor
microcrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60055582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055186B2 (enrdf_load_stackoverflow
Inventor
Akihisa Matsuda
彰久 松田
Tsuneo Yamazaki
山崎　恒夫
Hideo Tanaka
秀夫 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Seiko Instruments Inc filed Critical Agency of Industrial Science and Technology
Priority to JP60055582A priority Critical patent/JPS61214476A/ja
Publication of JPS61214476A publication Critical patent/JPS61214476A/ja
Publication of JPH055186B2 publication Critical patent/JPH055186B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes

Landscapes

  • Liquid Crystal (AREA)
  • Dram (AREA)
JP60055582A 1985-03-19 1985-03-19 薄膜トランジスタ Granted JPS61214476A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60055582A JPS61214476A (ja) 1985-03-19 1985-03-19 薄膜トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60055582A JPS61214476A (ja) 1985-03-19 1985-03-19 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS61214476A true JPS61214476A (ja) 1986-09-24
JPH055186B2 JPH055186B2 (enrdf_load_stackoverflow) 1993-01-21

Family

ID=13002730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60055582A Granted JPS61214476A (ja) 1985-03-19 1985-03-19 薄膜トランジスタ

Country Status (1)

Country Link
JP (1) JPS61214476A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02118955U (enrdf_load_stackoverflow) * 1989-03-10 1990-09-25
US5075746A (en) * 1988-07-19 1991-12-24 Agency Of Industrial Science And Technology Thin film field effect transistor and a method of manufacturing the same
US6140666A (en) * 1991-03-27 2000-10-31 Canon Kabushiki Kaisha Thin film semiconductor device with a semiconductor large including crystals of an average grain size with a range of 50-350-Å

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380160A (en) * 1976-12-24 1978-07-15 Mitsubishi Electric Corp Manufacture of substrate for semiconductor device
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS59141271A (ja) * 1983-01-31 1984-08-13 Sharp Corp 薄膜トランジスタ
JPS6159873A (ja) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5380160A (en) * 1976-12-24 1978-07-15 Mitsubishi Electric Corp Manufacture of substrate for semiconductor device
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof
JPS59141271A (ja) * 1983-01-31 1984-08-13 Sharp Corp 薄膜トランジスタ
JPS6159873A (ja) * 1984-08-31 1986-03-27 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタおよびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5075746A (en) * 1988-07-19 1991-12-24 Agency Of Industrial Science And Technology Thin film field effect transistor and a method of manufacturing the same
JPH02118955U (enrdf_load_stackoverflow) * 1989-03-10 1990-09-25
US6140666A (en) * 1991-03-27 2000-10-31 Canon Kabushiki Kaisha Thin film semiconductor device with a semiconductor large including crystals of an average grain size with a range of 50-350-Å

Also Published As

Publication number Publication date
JPH055186B2 (enrdf_load_stackoverflow) 1993-01-21

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