JPS61208828A - 多層の液相エピタキシヤル成長方法 - Google Patents

多層の液相エピタキシヤル成長方法

Info

Publication number
JPS61208828A
JPS61208828A JP60049401A JP4940185A JPS61208828A JP S61208828 A JPS61208828 A JP S61208828A JP 60049401 A JP60049401 A JP 60049401A JP 4940185 A JP4940185 A JP 4940185A JP S61208828 A JPS61208828 A JP S61208828A
Authority
JP
Japan
Prior art keywords
solution
raw material
distribution
material solution
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60049401A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330980B2 (enrdf_load_stackoverflow
Inventor
Mineo Wajima
峰生 和島
Tsunehiro Unno
恒弘 海野
Taiichiro Konno
泰一郎 今野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP60049401A priority Critical patent/JPS61208828A/ja
Publication of JPS61208828A publication Critical patent/JPS61208828A/ja
Publication of JPH0330980B2 publication Critical patent/JPH0330980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP60049401A 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法 Granted JPS61208828A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60049401A JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60049401A JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61208828A true JPS61208828A (ja) 1986-09-17
JPH0330980B2 JPH0330980B2 (enrdf_load_stackoverflow) 1991-05-01

Family

ID=12830018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60049401A Granted JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61208828A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102779A (enrdf_load_stackoverflow) * 1972-04-10 1973-12-24
JPS5651158A (en) * 1979-10-03 1981-05-08 Ricoh Co Ltd Reproducing method of binary picture
JPS5742211A (en) * 1980-08-28 1982-03-09 Nippon Gakki Seizo Kk Feedback amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102779A (enrdf_load_stackoverflow) * 1972-04-10 1973-12-24
JPS5651158A (en) * 1979-10-03 1981-05-08 Ricoh Co Ltd Reproducing method of binary picture
JPS5742211A (en) * 1980-08-28 1982-03-09 Nippon Gakki Seizo Kk Feedback amplifier

Also Published As

Publication number Publication date
JPH0330980B2 (enrdf_load_stackoverflow) 1991-05-01

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