JPS6120520B2 - - Google Patents

Info

Publication number
JPS6120520B2
JPS6120520B2 JP54056134A JP5613479A JPS6120520B2 JP S6120520 B2 JPS6120520 B2 JP S6120520B2 JP 54056134 A JP54056134 A JP 54056134A JP 5613479 A JP5613479 A JP 5613479A JP S6120520 B2 JPS6120520 B2 JP S6120520B2
Authority
JP
Japan
Prior art keywords
silicon
layer
seed layer
silicon carbide
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54056134A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55149198A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613479A priority Critical patent/JPS55149198A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55149198A publication Critical patent/JPS55149198A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6120520B2 publication Critical patent/JPS6120520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP5613479A 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149198A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5613479A JPS55149198A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613479A JPS55149198A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149198A JPS55149198A (en) 1980-11-20
JPS6120520B2 true JPS6120520B2 (enExample) 1986-05-22

Family

ID=13018596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613479A Granted JPS55149198A (en) 1979-01-25 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149198A (enExample)

Also Published As

Publication number Publication date
JPS55149198A (en) 1980-11-20

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