JPS61201690A - 化合物半導体単結晶の育成方法および育成装置 - Google Patents
化合物半導体単結晶の育成方法および育成装置Info
- Publication number
- JPS61201690A JPS61201690A JP4105985A JP4105985A JPS61201690A JP S61201690 A JPS61201690 A JP S61201690A JP 4105985 A JP4105985 A JP 4105985A JP 4105985 A JP4105985 A JP 4105985A JP S61201690 A JPS61201690 A JP S61201690A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- melt
- single crystal
- crystal
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 153
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 150000001875 compounds Chemical class 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 28
- 239000000155 melt Substances 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000002109 crystal growth method Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 9
- 230000007246 mechanism Effects 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract description 2
- 239000007790 solid phase Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 229910002665 PbTe Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000003399 chemotactic effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011491 glass wool Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4105985A JPS61201690A (ja) | 1985-03-04 | 1985-03-04 | 化合物半導体単結晶の育成方法および育成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4105985A JPS61201690A (ja) | 1985-03-04 | 1985-03-04 | 化合物半導体単結晶の育成方法および育成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201690A true JPS61201690A (ja) | 1986-09-06 |
| JPH0242800B2 JPH0242800B2 (enrdf_load_stackoverflow) | 1990-09-26 |
Family
ID=12597843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4105985A Granted JPS61201690A (ja) | 1985-03-04 | 1985-03-04 | 化合物半導体単結晶の育成方法および育成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201690A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102864496A (zh) * | 2012-09-20 | 2013-01-09 | 上海大学 | 移动加热器法生长碲锌镉晶体的装置 |
| WO2015129091A1 (ja) * | 2014-02-27 | 2015-09-03 | 日立アロカメディカル株式会社 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5731555A (en) * | 1980-08-02 | 1982-02-20 | Showa Aluminium Co Ltd | Manufacture of aluminum foil vessel |
| JPS57179093A (en) * | 1981-04-27 | 1982-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for manufacturing single crystal of compound semiconductor |
-
1985
- 1985-03-04 JP JP4105985A patent/JPS61201690A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5731555A (en) * | 1980-08-02 | 1982-02-20 | Showa Aluminium Co Ltd | Manufacture of aluminum foil vessel |
| JPS57179093A (en) * | 1981-04-27 | 1982-11-04 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for manufacturing single crystal of compound semiconductor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102864496A (zh) * | 2012-09-20 | 2013-01-09 | 上海大学 | 移动加热器法生长碲锌镉晶体的装置 |
| WO2015129091A1 (ja) * | 2014-02-27 | 2015-09-03 | 日立アロカメディカル株式会社 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
| JP2015160771A (ja) * | 2014-02-27 | 2015-09-07 | 日立アロカメディカル株式会社 | 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法 |
| CN106062258A (zh) * | 2014-02-27 | 2016-10-26 | 株式会社日立制作所 | 晶体培养用坩埚、具备该晶体培养用坩埚的晶体培养装置以及晶体培养方法 |
| EP3112503A4 (en) * | 2014-02-27 | 2017-08-23 | Hitachi, Ltd. | Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0242800B2 (enrdf_load_stackoverflow) | 1990-09-26 |
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