JPH0242800B2 - - Google Patents

Info

Publication number
JPH0242800B2
JPH0242800B2 JP60041059A JP4105985A JPH0242800B2 JP H0242800 B2 JPH0242800 B2 JP H0242800B2 JP 60041059 A JP60041059 A JP 60041059A JP 4105985 A JP4105985 A JP 4105985A JP H0242800 B2 JPH0242800 B2 JP H0242800B2
Authority
JP
Japan
Prior art keywords
crystal growth
melt
crystal
single crystal
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60041059A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61201690A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4105985A priority Critical patent/JPS61201690A/ja
Publication of JPS61201690A publication Critical patent/JPS61201690A/ja
Publication of JPH0242800B2 publication Critical patent/JPH0242800B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4105985A 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置 Granted JPS61201690A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4105985A JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4105985A JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Publications (2)

Publication Number Publication Date
JPS61201690A JPS61201690A (ja) 1986-09-06
JPH0242800B2 true JPH0242800B2 (enrdf_load_stackoverflow) 1990-09-26

Family

ID=12597843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4105985A Granted JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Country Status (1)

Country Link
JP (1) JPS61201690A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102864496A (zh) * 2012-09-20 2013-01-09 上海大学 移动加热器法生长碲锌镉晶体的装置
JP6162625B2 (ja) * 2014-02-27 2017-07-12 株式会社日立製作所 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731555A (en) * 1980-08-02 1982-02-20 Showa Aluminium Co Ltd Manufacture of aluminum foil vessel
JPS57179093A (en) * 1981-04-27 1982-11-04 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for manufacturing single crystal of compound semiconductor

Also Published As

Publication number Publication date
JPS61201690A (ja) 1986-09-06

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