JPS61201690A - 化合物半導体単結晶の育成方法および育成装置 - Google Patents

化合物半導体単結晶の育成方法および育成装置

Info

Publication number
JPS61201690A
JPS61201690A JP4105985A JP4105985A JPS61201690A JP S61201690 A JPS61201690 A JP S61201690A JP 4105985 A JP4105985 A JP 4105985A JP 4105985 A JP4105985 A JP 4105985A JP S61201690 A JPS61201690 A JP S61201690A
Authority
JP
Japan
Prior art keywords
crystal growth
melt
single crystal
crystal
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4105985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0242800B2 (cg-RX-API-DMAC7.html
Inventor
Kyoichi Kinoshita
恭一 木下
Kiyomasa Sugii
杉井　清昌
Tomoaki Yamada
山田　智秋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4105985A priority Critical patent/JPS61201690A/ja
Publication of JPS61201690A publication Critical patent/JPS61201690A/ja
Publication of JPH0242800B2 publication Critical patent/JPH0242800B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP4105985A 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置 Granted JPS61201690A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4105985A JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4105985A JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Publications (2)

Publication Number Publication Date
JPS61201690A true JPS61201690A (ja) 1986-09-06
JPH0242800B2 JPH0242800B2 (cg-RX-API-DMAC7.html) 1990-09-26

Family

ID=12597843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4105985A Granted JPS61201690A (ja) 1985-03-04 1985-03-04 化合物半導体単結晶の育成方法および育成装置

Country Status (1)

Country Link
JP (1) JPS61201690A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102864496A (zh) * 2012-09-20 2013-01-09 上海大学 移动加热器法生长碲锌镉晶体的装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731555A (en) * 1980-08-02 1982-02-20 Showa Aluminium Co Ltd Manufacture of aluminum foil vessel
JPS57179093A (en) * 1981-04-27 1982-11-04 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for manufacturing single crystal of compound semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5731555A (en) * 1980-08-02 1982-02-20 Showa Aluminium Co Ltd Manufacture of aluminum foil vessel
JPS57179093A (en) * 1981-04-27 1982-11-04 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for manufacturing single crystal of compound semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102864496A (zh) * 2012-09-20 2013-01-09 上海大学 移动加热器法生长碲锌镉晶体的装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
JP2015160771A (ja) * 2014-02-27 2015-09-07 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
CN106062258A (zh) * 2014-02-27 2016-10-26 株式会社日立制作所 晶体培养用坩埚、具备该晶体培养用坩埚的晶体培养装置以及晶体培养方法
EP3112503A4 (en) * 2014-02-27 2017-08-23 Hitachi, Ltd. Crucible for crystal growth, crystal growth apparatus provided therewith, and method for growing crystals

Also Published As

Publication number Publication date
JPH0242800B2 (cg-RX-API-DMAC7.html) 1990-09-26

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