JPS61201414A - シリコン単結晶層の製造方法 - Google Patents

シリコン単結晶層の製造方法

Info

Publication number
JPS61201414A
JPS61201414A JP60040323A JP4032385A JPS61201414A JP S61201414 A JPS61201414 A JP S61201414A JP 60040323 A JP60040323 A JP 60040323A JP 4032385 A JP4032385 A JP 4032385A JP S61201414 A JPS61201414 A JP S61201414A
Authority
JP
Japan
Prior art keywords
film
silicon
single crystal
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60040323A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0334847B2 (enExample
Inventor
Tomoyasu Inoue
井上　知泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60040323A priority Critical patent/JPS61201414A/ja
Publication of JPS61201414A publication Critical patent/JPS61201414A/ja
Publication of JPH0334847B2 publication Critical patent/JPH0334847B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3411—
    • H10P14/3802—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2926—
    • H10P14/3211—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3248—
    • H10P14/3256—
    • H10P14/3258—
    • H10P14/3458—
    • H10P14/3466—
    • H10P14/3808—
    • H10P14/3818—
    • H10P14/382—

Landscapes

  • Recrystallisation Techniques (AREA)
JP60040323A 1985-03-02 1985-03-02 シリコン単結晶層の製造方法 Granted JPS61201414A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60040323A JPS61201414A (ja) 1985-03-02 1985-03-02 シリコン単結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60040323A JPS61201414A (ja) 1985-03-02 1985-03-02 シリコン単結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS61201414A true JPS61201414A (ja) 1986-09-06
JPH0334847B2 JPH0334847B2 (enExample) 1991-05-24

Family

ID=12577396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60040323A Granted JPS61201414A (ja) 1985-03-02 1985-03-02 シリコン単結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS61201414A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336514A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JP2009231712A (ja) * 2008-03-25 2009-10-08 Sumitomo Heavy Ind Ltd レーザ加工方法及び半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893222A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法
JPS58212123A (ja) * 1982-06-02 1983-12-09 Hitachi Ltd 単結晶薄膜の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893222A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体単結晶膜の製造方法
JPS58212123A (ja) * 1982-06-02 1983-12-09 Hitachi Ltd 単結晶薄膜の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336514A (ja) * 1986-07-30 1988-02-17 Sony Corp 半導体単結晶薄膜の製造方法
JP2009231712A (ja) * 2008-03-25 2009-10-08 Sumitomo Heavy Ind Ltd レーザ加工方法及び半導体装置

Also Published As

Publication number Publication date
JPH0334847B2 (enExample) 1991-05-24

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