JPS61194838A - Ｃｖｄ法による薄膜形成方法 - Google Patents

Ｃｖｄ法による薄膜形成方法

Info

Publication number
JPS61194838A
JPS61194838A JP60034555A JP3455585A JPS61194838A JP S61194838 A JPS61194838 A JP S61194838A JP 60034555 A JP60034555 A JP 60034555A JP 3455585 A JP3455585 A JP 3455585A JP S61194838 A JPS61194838 A JP S61194838A
Authority
JP
Japan
Prior art keywords
gas
furnace
reaction
wafer
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60034555A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527973B2 (enrdf_load_stackoverflow
Inventor
Katsumi Takami
高見　勝己
Yukio Murakawa
幸雄 村川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP60034555A priority Critical patent/JPS61194838A/ja
Publication of JPS61194838A publication Critical patent/JPS61194838A/ja
Publication of JPH0527973B2 publication Critical patent/JPH0527973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP60034555A 1985-02-25 1985-02-25 Ｃｖｄ法による薄膜形成方法 Granted JPS61194838A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60034555A JPS61194838A (ja) 1985-02-25 1985-02-25 Ｃｖｄ法による薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60034555A JPS61194838A (ja) 1985-02-25 1985-02-25 Ｃｖｄ法による薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS61194838A true JPS61194838A (ja) 1986-08-29
JPH0527973B2 JPH0527973B2 (enrdf_load_stackoverflow) 1993-04-22

Family

ID=12417556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60034555A Granted JPS61194838A (ja) 1985-02-25 1985-02-25 Ｃｖｄ法による薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS61194838A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62218574A (ja) * 1986-03-20 1987-09-25 Shinku Zairyo Kk 化学蒸着装置
JPS6389668A (ja) * 1986-10-03 1988-04-20 Hitachi Electronics Eng Co Ltd 気相反応装置および該装置の制御方法
US4976216A (en) * 1987-11-11 1990-12-11 Sumitomo Chemical Co., Ltd. Apparatus for vapor-phase growth
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
JP2007165475A (ja) * 2005-12-12 2007-06-28 Hitachi Kokusai Electric Inc 基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224118A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd 光化学気相反応法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224118A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd 光化学気相反応法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62218574A (ja) * 1986-03-20 1987-09-25 Shinku Zairyo Kk 化学蒸着装置
JPS6389668A (ja) * 1986-10-03 1988-04-20 Hitachi Electronics Eng Co Ltd 気相反応装置および該装置の制御方法
US4976216A (en) * 1987-11-11 1990-12-11 Sumitomo Chemical Co., Ltd. Apparatus for vapor-phase growth
US4989541A (en) * 1989-02-23 1991-02-05 Nobuo Mikoshiba Thin film forming apparatus
JP2007165475A (ja) * 2005-12-12 2007-06-28 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
JPH0527973B2 (enrdf_load_stackoverflow) 1993-04-22

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