JPS6119113B2 - - Google Patents
Info
- Publication number
- JPS6119113B2 JPS6119113B2 JP54071706A JP7170679A JPS6119113B2 JP S6119113 B2 JPS6119113 B2 JP S6119113B2 JP 54071706 A JP54071706 A JP 54071706A JP 7170679 A JP7170679 A JP 7170679A JP S6119113 B2 JPS6119113 B2 JP S6119113B2
- Authority
- JP
- Japan
- Prior art keywords
- resin film
- film
- photosensitive resin
- wiring
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7170679A JPS55163862A (en) | 1979-06-07 | 1979-06-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7170679A JPS55163862A (en) | 1979-06-07 | 1979-06-07 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55163862A JPS55163862A (en) | 1980-12-20 |
| JPS6119113B2 true JPS6119113B2 (Direct) | 1986-05-15 |
Family
ID=13468244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7170679A Granted JPS55163862A (en) | 1979-06-07 | 1979-06-07 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55163862A (Direct) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6383714U (Direct) * | 1986-11-20 | 1988-06-01 |
-
1979
- 1979-06-07 JP JP7170679A patent/JPS55163862A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6383714U (Direct) * | 1986-11-20 | 1988-06-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55163862A (en) | 1980-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62185325A (ja) | リフト・オフ法 | |
| JP2518435B2 (ja) | 多層配線形成法 | |
| JPS63304644A (ja) | ヴアイア・ホール形成方法 | |
| US5393709A (en) | Method of making stress released VLSI structure by the formation of porous intermetal layer | |
| JP2000216350A (ja) | 強誘電体記憶素子の製造方法 | |
| JP3061558B2 (ja) | 半導体装置の絶縁層の形成方法 | |
| JPS6119113B2 (Direct) | ||
| JPH038581B2 (Direct) | ||
| JPH04127454A (ja) | 半導体装置 | |
| JPH0653134A (ja) | 半導体装置の製造方法 | |
| JPH0629400A (ja) | 半導体装置及びその製造方法 | |
| JPS627699B2 (Direct) | ||
| JPH0226053A (ja) | 半導体装置の製造方法 | |
| JPH0435047A (ja) | 半導体装置の多層配線形成方法 | |
| JP2003045970A (ja) | 半導体装置及びその製造方法 | |
| KR0137813B1 (ko) | 모스 트랜지스터(mosfet)의 금속 배선 형성 방법 | |
| JP3473302B2 (ja) | 塗布型絶縁膜の形成方法及び半導体装置の製造方法並びに半導体装置 | |
| JP3641488B2 (ja) | 多層配線構造の形成方法 | |
| JPH07321202A (ja) | 多層配線の形成方法 | |
| JPS6322067B2 (Direct) | ||
| JPS6141137B2 (Direct) | ||
| JPH0337857B2 (Direct) | ||
| JPS6227745B2 (Direct) | ||
| JPS5946419B2 (ja) | 半導体装置におけるポリイミド膜の形成方法 | |
| JPS6125219B2 (Direct) |