JPS61189622A - 分子線エピタキシ装置 - Google Patents

分子線エピタキシ装置

Info

Publication number
JPS61189622A
JPS61189622A JP60030805A JP3080585A JPS61189622A JP S61189622 A JPS61189622 A JP S61189622A JP 60030805 A JP60030805 A JP 60030805A JP 3080585 A JP3080585 A JP 3080585A JP S61189622 A JPS61189622 A JP S61189622A
Authority
JP
Japan
Prior art keywords
hydrogen
molecular beam
beam source
shielding plate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60030805A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035050B2 (enExample
Inventor
Takuji Sonoda
琢二 園田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60030805A priority Critical patent/JPS61189622A/ja
Publication of JPS61189622A publication Critical patent/JPS61189622A/ja
Publication of JPH035050B2 publication Critical patent/JPH035050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP60030805A 1985-02-19 1985-02-19 分子線エピタキシ装置 Granted JPS61189622A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60030805A JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60030805A JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Publications (2)

Publication Number Publication Date
JPS61189622A true JPS61189622A (ja) 1986-08-23
JPH035050B2 JPH035050B2 (enExample) 1991-01-24

Family

ID=12313895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030805A Granted JPS61189622A (ja) 1985-02-19 1985-02-19 分子線エピタキシ装置

Country Status (1)

Country Link
JP (1) JPS61189622A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61261294A (ja) * 1985-05-14 1986-11-19 Nippon Telegr & Teleph Corp <Ntt> 分子線エピタキシャル成長法
WO2007086560A1 (ja) * 2006-01-30 2007-08-02 Rohm Co., Ltd. パージ機能を有する分子線セル

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61261294A (ja) * 1985-05-14 1986-11-19 Nippon Telegr & Teleph Corp <Ntt> 分子線エピタキシャル成長法
WO2007086560A1 (ja) * 2006-01-30 2007-08-02 Rohm Co., Ltd. パージ機能を有する分子線セル

Also Published As

Publication number Publication date
JPH035050B2 (enExample) 1991-01-24

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