JPS61188539A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS61188539A JPS61188539A JP60028250A JP2825085A JPS61188539A JP S61188539 A JPS61188539 A JP S61188539A JP 60028250 A JP60028250 A JP 60028250A JP 2825085 A JP2825085 A JP 2825085A JP S61188539 A JPS61188539 A JP S61188539A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- tables
- formulas
- chemical formulas
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 17
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229920000620 organic polymer Polymers 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- 150000001334 alicyclic compounds Chemical class 0.000 claims description 4
- 150000002576 ketones Chemical class 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000012046 mixed solvent Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 11
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 230000009477 glass transition Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- -1 polysiloxane Polymers 0.000 description 23
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- VAPQAGMSICPBKJ-UHFFFAOYSA-N 2-nitroacridine Chemical compound C1=CC=CC2=CC3=CC([N+](=O)[O-])=CC=C3N=C21 VAPQAGMSICPBKJ-UHFFFAOYSA-N 0.000 description 7
- IWHVCHNCTHGORM-UHDJGPCESA-M potassium;(e)-3-phenylprop-2-enoate Chemical compound [K+].[O-]C(=O)\C=C\C1=CC=CC=C1 IWHVCHNCTHGORM-UHDJGPCESA-M 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- LLLCSBYSPJHDJX-UHFFFAOYSA-M potassium;2-methylprop-2-enoate Chemical compound [K+].CC(=C)C([O-])=O LLLCSBYSPJHDJX-UHFFFAOYSA-M 0.000 description 5
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 238000007265 chloromethylation reaction Methods 0.000 description 4
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 4
- KBXJHRABGYYAFC-UHFFFAOYSA-N octaphenylsilsesquioxane Chemical compound O1[Si](O2)(C=3C=CC=CC=3)O[Si](O3)(C=4C=CC=CC=4)O[Si](O4)(C=5C=CC=CC=5)O[Si]1(C=1C=CC=CC=1)O[Si](O1)(C=5C=CC=CC=5)O[Si]2(C=2C=CC=CC=2)O[Si]3(C=2C=CC=CC=2)O[Si]41C1=CC=CC=C1 KBXJHRABGYYAFC-UHFFFAOYSA-N 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- MLIWQXBKMZNZNF-UHFFFAOYSA-N 2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1C(=CC=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-UHFFFAOYSA-N 0.000 description 2
- XJUZRXYOEPSWMB-UHFFFAOYSA-N Chloromethyl methyl ether Chemical compound COCCl XJUZRXYOEPSWMB-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 2
- 229940061627 chloromethyl methyl ether Drugs 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- ZPEBBUBSCOELHI-UHFFFAOYSA-M ethyltrimethylammonium iodide Chemical compound [I-].CC[N+](C)(C)C ZPEBBUBSCOELHI-UHFFFAOYSA-M 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000005054 phenyltrichlorosilane Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- ARKQRZXCXIMZHG-UHFFFAOYSA-N 1-azido-4-[(4-azidophenyl)methyl]benzene Chemical compound C1=CC(N=[N+]=[N-])=CC=C1CC1=CC=C(N=[N+]=[N-])C=C1 ARKQRZXCXIMZHG-UHFFFAOYSA-N 0.000 description 1
- VCYDUTCMKSROID-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VCYDUTCMKSROID-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 241000080590 Niso Species 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- UQFSVBXCNGCBBW-UHFFFAOYSA-M tetraethylammonium iodide Chemical compound [I-].CC[N+](CC)(CC)CC UQFSVBXCNGCBBW-UHFFFAOYSA-M 0.000 description 1
- CDNLYCKVRAKJMX-UHFFFAOYSA-N trichloro-[2-(chloromethyl)phenyl]silane Chemical compound ClCC1=CC=CC=C1[Si](Cl)(Cl)Cl CDNLYCKVRAKJMX-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60028250A JPS61188539A (ja) | 1985-02-18 | 1985-02-18 | パタ−ン形成方法 |
| US06/733,505 US4702990A (en) | 1984-05-14 | 1985-05-10 | Photosensitive resin composition and process for forming photo-resist pattern using the same |
| KR1019850003252A KR930009567B1 (ko) | 1984-05-14 | 1985-05-13 | 감광성 수지 조성물 및 그것을 사용한 광저항 패턴형성방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60028250A JPS61188539A (ja) | 1985-02-18 | 1985-02-18 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188539A true JPS61188539A (ja) | 1986-08-22 |
| JPH0345380B2 JPH0345380B2 (enrdf_load_stackoverflow) | 1991-07-10 |
Family
ID=12243327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60028250A Granted JPS61188539A (ja) | 1984-05-14 | 1985-02-18 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188539A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163744A (ja) * | 1988-12-19 | 1990-06-25 | Fujitsu Ltd | レジストパターンの形成方法 |
| DE10101734A1 (de) * | 2001-01-16 | 2002-07-25 | Osram Opto Semiconductors Gmbh | Verfahren zum Ausbilden einer Ätzmaske |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896654A (ja) * | 1981-12-02 | 1983-06-08 | Hitachi Chem Co Ltd | 感光性シリコ−ン樹脂組成物 |
| JPS58207041A (ja) * | 1982-05-28 | 1983-12-02 | Nec Corp | 放射線感応性高分子レジスト |
| JPS59198446A (ja) * | 1983-04-26 | 1984-11-10 | Nippon Telegr & Teleph Corp <Ntt> | 感光性樹脂組成物及びその使用方法 |
-
1985
- 1985-02-18 JP JP60028250A patent/JPS61188539A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5896654A (ja) * | 1981-12-02 | 1983-06-08 | Hitachi Chem Co Ltd | 感光性シリコ−ン樹脂組成物 |
| JPS58207041A (ja) * | 1982-05-28 | 1983-12-02 | Nec Corp | 放射線感応性高分子レジスト |
| JPS59198446A (ja) * | 1983-04-26 | 1984-11-10 | Nippon Telegr & Teleph Corp <Ntt> | 感光性樹脂組成物及びその使用方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02163744A (ja) * | 1988-12-19 | 1990-06-25 | Fujitsu Ltd | レジストパターンの形成方法 |
| DE10101734A1 (de) * | 2001-01-16 | 2002-07-25 | Osram Opto Semiconductors Gmbh | Verfahren zum Ausbilden einer Ätzmaske |
| DE10101734C2 (de) * | 2001-01-16 | 2003-04-24 | Osram Opto Semiconductors Gmbh | Verfahren zum Ausbilden einer Ätzmaske auf einem Substrat |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345380B2 (enrdf_load_stackoverflow) | 1991-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102245723B (zh) | 可湿蚀刻的抗反射涂层 | |
| JP5766440B2 (ja) | シロキサンポリマー組成物及びその使用方法 | |
| CN102245722B (zh) | 可转换的抗反射涂层 | |
| WO1999009457A1 (fr) | Resine de reserve sa composition et procede de creation de motifs l'utilisant | |
| JPH0369101B2 (enrdf_load_stackoverflow) | ||
| KR100792045B1 (ko) | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법 | |
| EP0466025B1 (en) | Resist material, method for the production of the same and process of forming resist patterns using the same | |
| JP5631738B2 (ja) | 新規シロキサンポリマー組成物 | |
| EP0164598B1 (en) | Photosensitive resin composition and process for forming photo-resist pattern using the same | |
| JPS60119550A (ja) | パタン形成材料及びパタン形成方法 | |
| JPS61188539A (ja) | パタ−ン形成方法 | |
| JP2011209694A5 (enrdf_load_stackoverflow) | ||
| JP2019137762A (ja) | ポリマー、感光性樹脂組成物、感光性樹脂膜、パターン、有機エレクトロルミネッセンス素子、パターンを備えた基板の製造方法およびポリマーの製造方法 | |
| TW202231737A (zh) | 樹脂組成物、固化膜、固化膜的製造方法、附多層膜之基板、附圖案之基板的製造方法、光敏性樹脂組成物、圖案固化膜的製造方法、聚合物的製造方法以及樹脂組成物的製造方法 | |
| JPH0232354A (ja) | 感光性樹脂組成物 | |
| JPS59198446A (ja) | 感光性樹脂組成物及びその使用方法 | |
| KR100521809B1 (ko) | 포토레지스트용 폴리카르보메틸실란 유도체 및 이를포함한 포토레지스트 조성물 | |
| CN104066804A (zh) | 富含硅的抗反射涂层材料及其制备方法 | |
| JPH08193167A (ja) | 感光性樹脂組成物 | |
| JPS62220949A (ja) | 感光性樹脂組成物 | |
| JPH0314333B2 (enrdf_load_stackoverflow) | ||
| JPS6120031A (ja) | レジスト材料およびその製造方法 | |
| JP2573996B2 (ja) | パターン形成材料 | |
| JPS6053867B2 (ja) | ネガ型フオトレジストパタ−ンの形成方法 | |
| CN115403696A (zh) | 碱可溶性树脂、保护层组合物、保护层、叠层体以及光刻胶图案的形成方法 |