JPS61183971U - - Google Patents
Info
- Publication number
- JPS61183971U JPS61183971U JP6787785U JP6787785U JPS61183971U JP S61183971 U JPS61183971 U JP S61183971U JP 6787785 U JP6787785 U JP 6787785U JP 6787785 U JP6787785 U JP 6787785U JP S61183971 U JPS61183971 U JP S61183971U
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- crucible
- pulling
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims 4
- 239000002994 raw material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案に係る単結晶成長装置の一実施
例を示す断面図、第２図は第１図に示す単結晶成
長装置の要部を示す拡大断面図、第３図は本考案
の変形例を示す第２図と同様な拡大断面図、第４
図はＣＺ法による従来の単結晶成長装置の要部を
示す断面図である。
なお図面に用いた符号において、１，２……る
つぼ、３……融液、４，１６……発熱体、６……
単結晶、１５……空間、１７……熱遮蔽体、１８
……引上げ軸、である。
FIG. 1 is a sectional view showing an embodiment of the single crystal growth apparatus according to the present invention, FIG. 2 is an enlarged sectional view showing the main parts of the single crystal growth apparatus shown in FIG. 1, and FIG. An enlarged sectional view similar to FIG. 2 showing a modified example, and FIG.
The figure is a sectional view showing the main parts of a conventional single crystal growth apparatus using the CZ method. In addition, in the symbols used in the drawings, 1, 2... crucible, 3... melt, 4, 16... heating element, 6...
Single crystal, 15... Space, 17... Heat shield, 18
...It is a pulling shaft.
Claims (1)
を加熱するために前記るつぼの周囲に設けられて
いる第１の加熱手段と、前記融液から単結晶を引
き上げる引上げ手段とをそれぞれ具備する単結晶
成長装置において、前記るつぼと前記融液と引き
上げられた前記単結晶とによつて形成される空間
に第２の加熱手段を設けたことを特徴とする単結
晶成長装置。 A crucible containing a melt of a crystal raw material, a first heating means provided around the crucible for heating the melt, and a pulling means for pulling a single crystal from the melt. A single crystal growth apparatus, characterized in that a second heating means is provided in a space formed by the crucible, the melt, and the pulled single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985067877U JPH0315550Y2 (en) | 1985-05-08 | 1985-05-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985067877U JPH0315550Y2 (en) | 1985-05-08 | 1985-05-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183971U true JPS61183971U (en) | 1986-11-17 |
| JPH0315550Y2 JPH0315550Y2 (en) | 1991-04-04 |
Family
ID=30602112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985067877U Expired JPH0315550Y2 (en) | 1985-05-08 | 1985-05-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0315550Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03183689A (en) * | 1989-12-11 | 1991-08-09 | Mitsubishi Materials Corp | Device and method for pulling up single crystal |
| JP2006506306A (en) * | 2002-11-12 | 2006-02-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for growing single crystal ingot and crystal pulling apparatus |
| JP2015526380A (en) * | 2013-06-21 | 2015-09-10 | エルジー シルトロン インコーポレイテッド | Silicon single crystal growth apparatus and growth method thereof |
| JP2018080097A (en) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | Single crystal production device and single crystal production method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5522329U (en) * | 1978-07-31 | 1980-02-13 | ||
| JPS6027684A (en) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | Apparatus for producing single crystal |
-
1985
- 1985-05-08 JP JP1985067877U patent/JPH0315550Y2/ja not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5522329U (en) * | 1978-07-31 | 1980-02-13 | ||
| JPS6027684A (en) * | 1983-07-26 | 1985-02-12 | Fujitsu Ltd | Apparatus for producing single crystal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03183689A (en) * | 1989-12-11 | 1991-08-09 | Mitsubishi Materials Corp | Device and method for pulling up single crystal |
| JP2006506306A (en) * | 2002-11-12 | 2006-02-23 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for growing single crystal ingot and crystal pulling apparatus |
| JP2015526380A (en) * | 2013-06-21 | 2015-09-10 | エルジー シルトロン インコーポレイテッド | Silicon single crystal growth apparatus and growth method thereof |
| JP2018080097A (en) * | 2016-11-18 | 2018-05-24 | 住友金属鉱山株式会社 | Single crystal production device and single crystal production method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0315550Y2 (en) | 1991-04-04 |
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