JPS6010197U - Crucible for single crystal growth - Google Patents

Crucible for single crystal growth

Info

Publication number
JPS6010197U
JPS6010197U JP10062383U JP10062383U JPS6010197U JP S6010197 U JPS6010197 U JP S6010197U JP 10062383 U JP10062383 U JP 10062383U JP 10062383 U JP10062383 U JP 10062383U JP S6010197 U JPS6010197 U JP S6010197U
Authority
JP
Japan
Prior art keywords
crucible
single crystal
crystal growth
side wall
bottom plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10062383U
Other languages
Japanese (ja)
Inventor
巌 佐々木
Original Assignee
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士通株式会社 filed Critical 富士通株式会社
Priority to JP10062383U priority Critical patent/JPS6010197U/en
Publication of JPS6010197U publication Critical patent/JPS6010197U/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は高周波加熱コイルを用いた単結晶育成装置、第
２図は発熱体を用いた単結晶育成装置、第３図は従来の
ルツボの断面図、第４図は本考案の一実施例である、第
３図、第４図共にａは高周波加熱用ルツボ、ｂは抵抗発
熱体用ルツボを表す。 図において１５，２１．２７はルツボ、２２は保温材、
２３．２８は側壁、２４．２９は底板、２５．３０は側
壁延長部、２６．３１は保温材を示す。Figure 1 is a single crystal growth device using a high-frequency heating coil, Figure 2 is a single crystal growth device using a heating element, Figure 3 is a cross-sectional view of a conventional crucible, and Figure 4 is an example of an embodiment of the present invention. In both FIGS. 3 and 4, a represents a crucible for high-frequency heating, and b represents a crucible for a resistance heating element. In the figure, 15, 21, and 27 are crucibles, 22 is a heat insulator,
23.28 is a side wall, 24.29 is a bottom plate, 25.30 is a side wall extension, and 26.31 is a heat insulator.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 単結晶を育成するために結晶原料を溶解するルツボであ
って、側壁をルツボ底板よりも下方向に延ばしたことを
特徴とする単結晶育成用ルツボ。A crucible for growing a single crystal, which is a crucible for melting a crystal raw material to grow a single crystal, and is characterized in that a side wall extends downward from a bottom plate of the crucible.
JP10062383U 1983-06-29 1983-06-29 Crucible for single crystal growth Pending JPS6010197U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10062383U JPS6010197U (en) 1983-06-29 1983-06-29 Crucible for single crystal growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10062383U JPS6010197U (en) 1983-06-29 1983-06-29 Crucible for single crystal growth

Publications (1)

Publication Number Publication Date
JPS6010197U true JPS6010197U (en) 1985-01-24

Family

ID=30237958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10062383U Pending JPS6010197U (en) 1983-06-29 1983-06-29 Crucible for single crystal growth

Country Status (1)

Country Link
JP (1) JPS6010197U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JP2012206876A (en) * 2011-03-29 2012-10-25 Shin Etsu Handotai Co Ltd APPARATUS FOR GROWING SiC

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49179A (en) * 1972-04-19 1974-01-05
JPS5312771U (en) * 1977-04-14 1978-02-02
JPS5312771A (en) * 1976-07-22 1978-02-04 Morihiro Matsudaira Treatment of pollutionncausing wastes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49179A (en) * 1972-04-19 1974-01-05
JPS5312771A (en) * 1976-07-22 1978-02-04 Morihiro Matsudaira Treatment of pollutionncausing wastes
JPS5312771U (en) * 1977-04-14 1978-02-02

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JP2012206876A (en) * 2011-03-29 2012-10-25 Shin Etsu Handotai Co Ltd APPARATUS FOR GROWING SiC

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