JPS59172770U - Vertical Bridgeman Crystal Growth Furnace - Google Patents

Vertical Bridgeman Crystal Growth Furnace

Info

Publication number
JPS59172770U
JPS59172770U JP6776583U JP6776583U JPS59172770U JP S59172770 U JPS59172770 U JP S59172770U JP 6776583 U JP6776583 U JP 6776583U JP 6776583 U JP6776583 U JP 6776583U JP S59172770 U JPS59172770 U JP S59172770U
Authority
JP
Japan
Prior art keywords
crystal growth
growth furnace
vertical
region
vertical bridgeman
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6776583U
Other languages
Japanese (ja)
Inventor
萩屋 尋志
Original Assignee
東北金属工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東北金属工業株式会社 filed Critical 東北金属工業株式会社
Priority to JP6776583U priority Critical patent/JPS59172770U/en
Publication of JPS59172770U publication Critical patent/JPS59172770U/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の垂直ブリッジマン方式結晶育成炉を一部
破断して示した斜視図で、第2図は第1図の炉を用いた
時の結晶作製工程を説明するための図である。第3図は
本考案の一実施例による垂直ブリッジマン方式結晶育成
炉を一部破断して示した斜視図であり、第4図は第3図
の炉を用いた時の結晶作製工程を説明するための図であ
る。 図において、1及び1aは炉心管、2及び3は発熱体、
4は着脱可能な遮熱板、5及び5′はるつぼ、Aは第1
の領域、Bは第2の領域である。
Fig. 1 is a partially cutaway perspective view of a conventional vertical Bridgman type crystal growth furnace, and Fig. 2 is a diagram for explaining the crystal production process when using the furnace shown in Fig. 1. . FIG. 3 is a partially cutaway perspective view of a vertical Bridgman type crystal growth furnace according to an embodiment of the present invention, and FIG. 4 illustrates the crystal production process using the furnace shown in FIG. 3. This is a diagram for In the figure, 1 and 1a are furnace core tubes, 2 and 3 are heating elements,
4 is a removable heat shield plate, 5 and 5' are crucibles, and A is the first
area, B is the second area.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 垂直フリフジマン法による結晶育成に必要な温度分布を
、内部の軸方向に形成可能な第1の領域を有する垂直ブ
リッジマン方式結晶育成炉において、前記第1の領域に
よって育成された結晶を徐々に降温させることができる
、均一な温度分布を内部の軸方向に形成可能な第2の領
域を設けたことを特徴とする垂直フリッジマン方式結晶
育成炉。
In a vertical Bridgman type crystal growth furnace that has a first region that can form the temperature distribution necessary for crystal growth by the vertical Furifujiman method in the internal axial direction, the temperature of the crystal grown in the first region is gradually lowered. 1. A vertical Fridgeman type crystal growth furnace characterized in that a second region is provided in which a uniform temperature distribution can be formed in the internal axial direction.
JP6776583U 1983-05-09 1983-05-09 Vertical Bridgeman Crystal Growth Furnace Pending JPS59172770U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6776583U JPS59172770U (en) 1983-05-09 1983-05-09 Vertical Bridgeman Crystal Growth Furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6776583U JPS59172770U (en) 1983-05-09 1983-05-09 Vertical Bridgeman Crystal Growth Furnace

Publications (1)

Publication Number Publication Date
JPS59172770U true JPS59172770U (en) 1984-11-19

Family

ID=30197955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6776583U Pending JPS59172770U (en) 1983-05-09 1983-05-09 Vertical Bridgeman Crystal Growth Furnace

Country Status (1)

Country Link
JP (1) JPS59172770U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148389A (en) * 1985-12-23 1987-07-02 Nippon Mining Co Ltd Method for growing single crystal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53119789A (en) * 1977-03-29 1978-10-19 Sanyo Electric Co Ltd Electric furnace for crystal growth

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53119789A (en) * 1977-03-29 1978-10-19 Sanyo Electric Co Ltd Electric furnace for crystal growth

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148389A (en) * 1985-12-23 1987-07-02 Nippon Mining Co Ltd Method for growing single crystal

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