JPS6381867U - - Google Patents

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Publication number
JPS6381867U
JPS6381867U JP17460286U JP17460286U JPS6381867U JP S6381867 U JPS6381867 U JP S6381867U JP 17460286 U JP17460286 U JP 17460286U JP 17460286 U JP17460286 U JP 17460286U JP S6381867 U JPS6381867 U JP S6381867U
Authority
JP
Japan
Prior art keywords
crystal
halogen lamps
crystal manufacturing
melting method
registration request
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17460286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17460286U priority Critical patent/JPS6381867U/ja
Publication of JPS6381867U publication Critical patent/JPS6381867U/ja
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施の態様の模式図であつ
て、同図イはその正面図、第2図は浮遊帯域溶融
法の説明図である。 1……原料多結晶、2……成長結晶、3……加
熱コイル、4……反射板、5……ハロゲンランプ
、6……種結晶、7……導軸、8……溶融域、9
……電流調節器。
FIG. 1 is a schematic diagram of an embodiment of the present invention, and FIG. 1A is a front view thereof, and FIG. 2 is an explanatory diagram of the floating zone melting method. DESCRIPTION OF SYMBOLS 1... Raw material polycrystal, 2... Growing crystal, 3... Heating coil, 4... Reflection plate, 5... Halogen lamp, 6... Seed crystal, 7... Leading shaft, 8... Melting region, 9
...Current regulator.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 浮遊帯域溶融法による結晶製造装置において、
結晶育成時の成長結晶の周囲に1個または2個以
上の出力調整可能のハロゲンランプを配設すると
ともに、該ハロゲンランプの背後に反射板を設け
てなる結晶製造装置。
In crystal manufacturing equipment using floating zone melting method,
A crystal manufacturing apparatus comprising one or more output-adjustable halogen lamps arranged around a growing crystal during crystal growth, and a reflecting plate provided behind the halogen lamps.
JP17460286U 1986-11-12 1986-11-12 Pending JPS6381867U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17460286U JPS6381867U (en) 1986-11-12 1986-11-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17460286U JPS6381867U (en) 1986-11-12 1986-11-12

Publications (1)

Publication Number Publication Date
JPS6381867U true JPS6381867U (en) 1988-05-30

Family

ID=31113141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17460286U Pending JPS6381867U (en) 1986-11-12 1986-11-12

Country Status (1)

Country Link
JP (1) JPS6381867U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013299A (en) * 2012-08-02 2015-02-04 실트로닉 아게 Device for producing a monocrystal by crystallizing said monocrystal in a melting area

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150013299A (en) * 2012-08-02 2015-02-04 실트로닉 아게 Device for producing a monocrystal by crystallizing said monocrystal in a melting area
CN104540984A (en) * 2012-08-02 2015-04-22 硅电子股份公司 Device for producing a monocrystal by crystallizing said monocrystal in a melting area
JP2015522518A (en) * 2012-08-02 2015-08-06 ジルトロニック アクチエンゲゼルシャフトSiltronic AG Apparatus for producing single crystals by crystallization of single crystals in the melting region
US9932690B2 (en) 2012-08-02 2018-04-03 Siltronic Ag Device for producing a monocrystal by crystallizing said monocrystal in a melting area

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