JPS6139168U - Single crystal manufacturing equipment - Google Patents
Single crystal manufacturing equipmentInfo
- Publication number
- JPS6139168U JPS6139168U JP11964784U JP11964784U JPS6139168U JP S6139168 U JPS6139168 U JP S6139168U JP 11964784 U JP11964784 U JP 11964784U JP 11964784 U JP11964784 U JP 11964784U JP S6139168 U JPS6139168 U JP S6139168U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal manufacturing
- manufacturing equipment
- manufacturing apparatus
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａは本考案による単結晶製造装置の要部を示す平
面図、第１図ｂは本考案による単結晶製造装置の要部を
示す側断面図、第２図ａは結晶育、 成の初期段階にお
けるるつぼと固液界面の位置関係を示すための図、第２
図ｂは本考案による単結晶製造装置を用いて単結晶を製
造する場合において、第２図ａに示す状態における垂直
方向の温度分布を示すための図、第３図ａは結晶育成の
後期段階におけるるつぼと固液界面の位置関係を示すた
めの図、第３図ｂは従来の単結晶製造装置を用いて単結
晶を製造する場合において、第３図ａに ”（示
す状態における垂直方向の温度分布を示すための図、第
３図Ｃは本考案による単結晶製造装置を用いて単結晶を
製造する場合において、第３図ａに示す状態における垂
直方向の温度分布を示すための図である。
１・・・単結晶育成炉、２・・・るつぼ、３・・・高周
波加熱コイル、４・・・ガス管、５・・・恒温槽、、６
・・・流量計、７・・・ガスボンベ、８・・・原料融液
、９・・・単結晶。FIG. 1a is a plan view showing the main parts of the single crystal manufacturing apparatus according to the present invention, FIG. 1b is a side sectional view showing the main parts of the single crystal manufacturing apparatus according to the present invention, and FIG. Diagram 2 to show the positional relationship between the crucible and the solid-liquid interface at the initial stage of
Figure b is a diagram showing the vertical temperature distribution in the state shown in Figure 2 a when a single crystal is manufactured using the single crystal manufacturing apparatus according to the present invention, and Figure 3 a is a diagram showing the later stage of crystal growth. Figure 3b is a diagram showing the positional relationship between the crucible and the solid-liquid interface in Figure 3a. Figure 3C is a diagram showing the temperature distribution in the vertical direction in the state shown in Figure 3a when a single crystal is manufactured using the single crystal manufacturing apparatus according to the present invention. 1... Single crystal growth furnace, 2... Crucible, 3... High frequency heating coil, 4... Gas pipe, 5... Constant temperature chamber, 6
. . . Flowmeter, 7. Gas cylinder, 8. Raw material melt, 9. Single crystal.
Claims (1)
装置において、該るつぼの壁直上を延在するように配置
された保温用気体流通管と、該気体流通管に流す気体の
流量を調整するための調整機構とを有することを特徴と
する単結晶製造装置。In a single crystal manufacturing apparatus equipped with a crucible and using the Czochralski method, a heat-retaining gas flow pipe arranged to extend directly above the wall of the crucible, and for adjusting the flow rate of gas flowing through the gas flow pipe. A single crystal manufacturing apparatus characterized by having an adjustment mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11964784U JPS6139168U (en) | 1984-08-03 | 1984-08-03 | Single crystal manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11964784U JPS6139168U (en) | 1984-08-03 | 1984-08-03 | Single crystal manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6139168U true JPS6139168U (en) | 1986-03-12 |
| JPH024126Y2 JPH024126Y2 (en) | 1990-01-31 |
Family
ID=30678517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11964784U Granted JPS6139168U (en) | 1984-08-03 | 1984-08-03 | Single crystal manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6139168U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49104886A (en) * | 1973-02-12 | 1974-10-03 | ||
| JPS5051083A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS57205397A (en) * | 1981-06-12 | 1982-12-16 | Oki Electric Ind Co Ltd | Method and apparatus for growing single crystal |
-
1984
- 1984-08-03 JP JP11964784U patent/JPS6139168U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49104886A (en) * | 1973-02-12 | 1974-10-03 | ||
| JPS5051083A (en) * | 1973-09-05 | 1975-05-07 | ||
| JPS57205397A (en) * | 1981-06-12 | 1982-12-16 | Oki Electric Ind Co Ltd | Method and apparatus for growing single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH024126Y2 (en) | 1990-01-31 |
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