JPS6362480B2 - - Google Patents
Info
- Publication number
- JPS6362480B2 JPS6362480B2 JP5702882A JP5702882A JPS6362480B2 JP S6362480 B2 JPS6362480 B2 JP S6362480B2 JP 5702882 A JP5702882 A JP 5702882A JP 5702882 A JP5702882 A JP 5702882A JP S6362480 B2 JPS6362480 B2 JP S6362480B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- crystal rod
- induction heating
- heating coil
- concentrator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 16
- 238000004857 zone melting Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 17
- 230000006698 induction Effects 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- General Induction Heating (AREA)
Description
【発明の詳細な説明】
本発明は浮遊帯域溶融法（FZ法）による結晶
製造方法に関し、特に直径の大きな結晶棒を製造
する際の高周波誘導加熱コイルと該高周波加熱コ
イルにより溶融成長される結晶棒間の放電を防止
する方法に係るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a crystal manufacturing method using the floating zone melting method (FZ method), and in particular to a high-frequency induction heating coil and a crystal grown by the high-frequency induction heating coil when manufacturing a crystal rod with a large diameter. This invention relates to a method for preventing electrical discharge between rods.
FZ法による結晶育成は真空室内あるいは保護
ガス雰囲気中で行われるが、無転位結晶および大
きな直径育成のし易さから現在主として保護ガス
雰囲気中で行われることが一般的であり、保護ガ
スとしてアルゴンガスの使用が主流である。しか
し、アルゴンガス雰囲気中での結晶育成は真空中
での結晶育成に比較し、アルゴンガスの高周波電
圧に対する放電開始電圧が低いことから、特によ
り大きな高周波誘導加熱エネルギを必要とする大
きな直径の結晶育成の際誘導加熱コイルと該誘導
加熱コイルにより育成される結晶棒間で放電が起
る。これはその後の結晶育成を困難にするだけで
なく、結晶品質にも悪影響を及ぼすため、放電防
止対策が重要である。 Crystal growth by the FZ method is carried out in a vacuum chamber or in a protective gas atmosphere, but currently it is generally carried out mainly in a protective gas atmosphere because it is easy to grow dislocation-free crystals and large diameters, and argon is used as the protective gas. Gas is the mainstream. However, compared to crystal growth in vacuum, crystal growth in an argon gas atmosphere has a lower discharge start voltage relative to the high frequency voltage of argon gas, so crystals with a large diameter require greater high frequency induction heating energy. During growth, electrical discharge occurs between the induction heating coil and the crystal rod grown by the induction heating coil. This not only makes subsequent crystal growth difficult, but also has a negative effect on crystal quality, so it is important to take measures to prevent discharge.
この放電防止対策として、アルゴンガス雰囲気
中に少量の水素、あるいは窒素ガスを混合するこ
とは有効であるが、結晶棒の単結晶化阻害および
結晶欠陥の発生等が生じ、好ましくない。 As a measure to prevent this discharge, it is effective to mix a small amount of hydrogen or nitrogen gas into the argon gas atmosphere, but this is not preferable because it inhibits single crystallization of the crystal rod and generates crystal defects.
一方、誘導加熱コイルの電気的中心点と育成結
晶棒を電気的に接続（同電位とする）させる方法
（特公昭47−44404）が提案されている。これは誘
導加熱コイルと結晶棒間の最大電位を高周波供給
電位の1/2とすることが可能であり、有効な方法
であるが、原理的に1/2以下とすることが不可能
であり、より大きな直径（4″）の結晶の育成に
は、もはや放電を防止することは困難となる。 On the other hand, a method has been proposed (Japanese Patent Publication No. 47-44404) in which the electrical center point of the induction heating coil and the growing crystal rod are electrically connected (set to the same potential). This is an effective method because it allows the maximum potential between the induction heating coil and the crystal rod to be 1/2 of the high-frequency supply potential, but in principle it is impossible to reduce it to 1/2 or less. , with the growth of larger diameter (4″) crystals, it becomes difficult to prevent discharge any longer.
本発明はかかる問題の解決を課題とし、少なく
とも誘導加熱コイルと結晶棒間の電位を高周波供
給電位の1/4にすることが可能な新規な放電防止
法を提案するものである。 The present invention aims to solve this problem, and proposes a novel discharge prevention method that can reduce the potential between the induction heating coil and the crystal rod to at least 1/4 of the high-frequency supply potential.
すなわち、本発明の方法は浮遊帯域溶融法にお
いて結晶棒の溶融および育成に際し、複数に分割
されたコンセントレータによつて、結晶棒を溶融
し、かつ該コンセントレータの各々の電気的中心
点が該結晶棒に同電位となるように電気的に接続
することを特徴とする方法である。 That is, in the method of the present invention, when melting and growing a crystal rod in the floating zone melting method, the crystal rod is melted by a concentrator divided into a plurality of parts, and the electrical center point of each of the concentrators is aligned with the crystal rod. This method is characterized by electrically connecting them so that they have the same potential.
以下これを図について詳細に説明する。 This will be explained in detail below with reference to the figures.
第１図は前記特公昭47−44404号により公知の
方法に用いる装置を模式図的に示したもので、結
晶棒１を囲む誘導加熱コイル２は図示していない
高周波発振器に接続されている。 FIG. 1 schematically shows an apparatus used in the method known from Japanese Patent Publication No. 47-44404, in which an induction heating coil 2 surrounding a crystal rod 1 is connected to a high frequency oscillator (not shown).
この装置では、誘導加熱コイル２の電気的中心
点４を浮遊帯域溶融室の内壁に電気的に接続３す
ることにより、該室の内壁と電気的に接続３′さ
れている結晶棒１との最大電位差を誘導加熱コイ
ル電極間電位６の1/2とすることを可能としてい
る。 In this device, the electrical center point 4 of the induction heating coil 2 is electrically connected 3 to the inner wall of the floating zone melting chamber, thereby connecting the crystal rod 1 which is electrically connected 3' to the inner wall of the chamber. It is possible to set the maximum potential difference to 1/2 of the potential 6 between the induction heating coil electrodes.
第２ａ図は本発明方法に用いる装置の一例を模
式図的に示す断面図であり、第２ｂ図はその側面
図である。この第２ａ図、第２ｂ図において、結
晶棒１を囲む誘導加熱コイル２は図示していない
高周波発振器に接続されていることは第１図の場
合と同じであるが、本発明では誘導加熱コイル２
内に矢印で示す電流Ｉを直接結晶棒の溶融に用い
ないでコンセントレータ５を分割した５ａ，５ｂ
内の矢印で示す誘導電流I′により結晶棒を溶融す
るのである。 FIG. 2a is a sectional view schematically showing an example of an apparatus used in the method of the present invention, and FIG. 2b is a side view thereof. 2a and 2b, the induction heating coil 2 surrounding the crystal rod 1 is connected to a high frequency oscillator (not shown) as in the case of FIG. 1, but in the present invention, the induction heating coil 2 2
5a and 5b in which the concentrator 5 is divided without using the current I shown by the arrow inside to directly melt the crystal rod.
The crystal rod is melted by the induced current I' shown by the arrow inside.
この際、コンセントレータ５ａ，５ｂの各々の
電気的中心点４ａ，４ｂを溶融室内壁に電気的に
接続３する。これにより、該室内壁と電気的に接
続３′されている結晶棒１とコンセントレータ５
ａ，５ｂとの最大電位差は、誘導加熱コイル電極
間電位６の1/4となり、特公昭47−44404で提案さ
れた方法のさらに1/2となる。 At this time, the electrical center points 4a and 4b of the concentrators 5a and 5b are electrically connected 3 to the wall of the melting chamber. As a result, the crystal rod 1 and the concentrator 5 electrically connected to the indoor wall 3'
The maximum potential difference between a and 5b is 1/4 of the potential 6 between the electrodes of the induction heating coil, which is further 1/2 of the method proposed in Japanese Patent Publication No. 47-44404.
第２図はコンセントレータを２分割した場合を
示してあるが、本発明はこれにかぎらず、さらに
多数分割も可能であることは容易に推定できるも
のであり、コンセントレータと結晶棒間の電位を
必要に応じてさらに低減することが可能である。 Although FIG. 2 shows the case where the concentrator is divided into two, it is easy to assume that the present invention is not limited to this, and that it is possible to divide the concentrator into many more parts. It is possible to further reduce it depending on the situation.
本装置を実際に用いる場合、コンセントレータ
５ａ，５ｂは冷却が必要であるが、コンセントレ
ータ５ａ，５ｂの電気的中心点４ａ，４ｂの位置
に冷却水の導入、排出パイプを接続すれば冷却水
パイプの電気的絶縁の必要がなく有利である。 When actually using this device, the concentrators 5a and 5b need to be cooled, but by connecting the cooling water introduction and discharge pipes to the electrical center points 4a and 4b of the concentrators 5a and 5b, the cooling water pipes can be cooled. There is no need for electrical insulation, which is advantageous.
また、誘導加熱コイル２とコンセントレータ５
ａ，５ｂ間の間隙は、誘導結合の結合度を高める
ため、できるだけ狭くする必要があり、このため
スペーサとして石英製リング板を挿入するのが望
ましい。 In addition, the induction heating coil 2 and the concentrator 5
The gap between a and 5b needs to be as narrow as possible in order to increase the degree of inductive coupling, and for this reason it is desirable to insert a quartz ring plate as a spacer.
上記したように、本発明によれば、特に大きな
直径の結晶を浮遊帯域溶融法により育成する場合
でも放電防止ができるので良好な結晶性質をもつ
結晶体が得られる。 As described above, according to the present invention, even when a crystal with a particularly large diameter is grown by the floating zone melting method, discharge can be prevented, so that a crystal with good crystal properties can be obtained.
第１図は公知の浮遊帯域溶融装置の誘導加熱コ
イルと結晶棒との関係を示す一部断面説明図、第
２ａ図は本発明の実施例を示す一部断面説明図、
第２ｂ図はその側面図である。
１……結晶棒、２……誘導加熱コイル、３，
３′……接続、４，４ａ，４ｂ……電気的中心点、
５，５ａ，５ｂ……コンセントレータ。
FIG. 1 is a partially cross-sectional explanatory diagram showing the relationship between an induction heating coil and a crystal rod of a known floating zone melting device, and FIG. 2A is a partially cross-sectional explanatory diagram showing an embodiment of the present invention.
Figure 2b is a side view thereof. 1...Crystal rod, 2...Induction heating coil, 3,
3'... Connection, 4, 4a, 4b... Electrical center point,
5, 5a, 5b... Concentrator.
Claims (1)
育成に際し、複数に分割されたコンセントレータ
によつて結晶棒を溶融し、かつ該コンセントレー
タの各々の電気的中心点が該結晶棒に同電位とな
るように電気的に接続することを特徴とする浮遊
帯域溶融法による結晶製造方法。1. When melting and growing a crystal rod in the floating zone melting method, the crystal rod is melted by a concentrator divided into a plurality of parts, and the electrical center point of each of the concentrators is at the same potential as the crystal rod. A crystal manufacturing method using a floating zone melting method characterized by electrical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (en) | 1982-04-06 | 1982-04-06 | Preparation of crystal by floating zone melting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5702882A JPS58176195A (en) | 1982-04-06 | 1982-04-06 | Preparation of crystal by floating zone melting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176195A JPS58176195A (en) | 1983-10-15 |
| JPS6362480B2 true JPS6362480B2 (en) | 1988-12-02 |
Family
ID=13043973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5702882A Granted JPS58176195A (en) | 1982-04-06 | 1982-04-06 | Preparation of crystal by floating zone melting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176195A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006169060A (en) * | 2004-12-17 | 2006-06-29 | Shin Etsu Handotai Co Ltd | Apparatus and method for manufacturing single crystal |
| JP5365617B2 (en) * | 2010-12-14 | 2013-12-11 | 信越半導体株式会社 | Semiconductor single crystal manufacturing apparatus and semiconductor single crystal manufacturing method |
-
1982
- 1982-04-06 JP JP5702882A patent/JPS58176195A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58176195A (en) | 1983-10-15 |
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