JPS60136366U - Single crystal growth equipment - Google Patents
Single crystal growth equipmentInfo
- Publication number
- JPS60136366U JPS60136366U JP2378384U JP2378384U JPS60136366U JP S60136366 U JPS60136366 U JP S60136366U JP 2378384 U JP2378384 U JP 2378384U JP 2378384 U JP2378384 U JP 2378384U JP S60136366 U JPS60136366 U JP S60136366U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- crystal growth
- furnace
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案に係る単結晶育成装置の断面図、第２図
はるつぼの下部構造を示す拡大断面図、第３図は他の実
施例を示す同上拡大断面図、第４図は従来装置の断面図
、第５図は炉内の温度分布を表わすグラフである。
１・・・炉、２・・・るつぼ、３・・・反射板、１ｏ・
・・ヒータ、２０・・・突部。
もFig. 1 is a sectional view of a single crystal growth apparatus according to the present invention, Fig. 2 is an enlarged sectional view showing the lower structure of the crucible, Fig. 3 is an enlarged sectional view of the same as the above showing another embodiment, and Fig. 4 is a conventional one. FIG. 5, which is a cross-sectional view of the apparatus, is a graph showing the temperature distribution inside the furnace. 1...furnace, 2...crucible, 3...reflector, 1o.
...Heater, 20...protrusion. too
Claims (1)
させ或は炉１を引き上げることによりるつぼ２を下部か
ら徐々に炉外に臨出させ、るつぼ２内の溶融材料をるつ
ぼ２の下端部から単結晶化させる単結晶育成装置に於て
、る°つぼ２の・ 下方には放射熱をるつぼ
２へ向けて反射するべく、反射板３がるつぼ２に対して
一定の相対位置を保って水平に配備されでいることを特
徴と、 する単結晶育成装置。 ■ るつぼ２は下端中央に筒状の突部２０を有し恵シ＝
二二；：：：、、ｉ（：を−一二一 結晶育成装置
。 ■ 筒状の突部２０は内部が単結晶の種の収容室２１と
なっている実用新案登録請求の範囲第２項に記載の単結
晶育成−置。 ■ 反射板３は１、円板状断熱片３１め上面に円板状反
射片３２を密着接合してなる実用新案登録 ゛請求の範
囲第１項乃至第３項の何れかに記載の単結晶育成装置。[Scope of Claim for Utility Model Registration] ■ A crucible 2 is housed in a cylindrical furnace 1, and the crucible 2 is gradually brought out of the furnace from the lower part by lowering the crucible 2 or raising the furnace 1. In a single crystal growth apparatus for single-crystalizing the molten material in the crucible 2 from the lower end of the crucible 2, a reflecting plate 3 is provided below the crucible 2 to reflect radiant heat toward the crucible 2. 1. A single crystal growth apparatus, characterized in that it is arranged horizontally while maintaining a constant relative position with respect to 2. ■ The crucible 2 has a cylindrical protrusion 20 at the center of the lower end.
22;:::,,i(:wo-121 Crystal growth device. ■ The inside of the cylindrical protrusion 20 serves as a storage chamber 21 for single crystal seeds.Claim 2 of Utility Model Registration Single crystal growth and installation as described in Items 1. The reflecting plate 3 is registered as a utility model in which 1, a disk-shaped reflective piece 32 is closely bonded to the upper surface of a disk-shaped heat insulating piece 31. [Claims 1 to 1] The single crystal growth apparatus according to any one of Item 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2378384U JPS60136366U (en) | 1984-02-20 | 1984-02-20 | Single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2378384U JPS60136366U (en) | 1984-02-20 | 1984-02-20 | Single crystal growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60136366U true JPS60136366U (en) | 1985-09-10 |
Family
ID=30517327
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2378384U Pending JPS60136366U (en) | 1984-02-20 | 1984-02-20 | Single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60136366U (en) |
-
1984
- 1984-02-20 JP JP2378384U patent/JPS60136366U/en active Pending
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