JPH03120569U - - Google Patents
Info
- Publication number
- JPH03120569U JPH03120569U JP2705090U JP2705090U JPH03120569U JP H03120569 U JPH03120569 U JP H03120569U JP 2705090 U JP2705090 U JP 2705090U JP 2705090 U JP2705090 U JP 2705090U JP H03120569 U JPH03120569 U JP H03120569U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heater
- crystal growth
- heat
- provided around
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案に係る結晶成長装置の模式的断
面図、第２図は添加する不純物の濃度変化の固体
層比率依存性を示すグラフ、第３図は従来の結晶
成長装置の模式的断面図、第４図はシリコン単結
晶における抵抗率の変化を示すグラフ、第５図は
ＭＬ法の原理を説明するための模式図である。
１……るつぼ、１ａ……カーボンるつぼ、１ｂ
……石英るつぼ、２……ヒータ、３……側部保温
筒、９……断熱材、１２……単結晶、１３……融
液層、１４……固体層。
Fig. 1 is a schematic cross-sectional view of the crystal growth apparatus according to the present invention, Fig. 2 is a graph showing the dependence of the concentration change of added impurities on the solid layer ratio, and Fig. 3 is a schematic cross-section of the conventional crystal growth apparatus. 4 is a graph showing the change in resistivity in a silicon single crystal, and FIG. 5 is a schematic diagram for explaining the principle of the ML method. 1... Crucible, 1a... Carbon crucible, 1b
... Quartz crucible, 2 ... Heater, 3 ... Side heat insulating cylinder, 9 ... Heat insulating material, 12 ... Single crystal, 13 ... Melt layer, 14 ... Solid layer.
Claims (1)
して共存させているるつぼと、該るつぼの周囲に
設けられたヒータと、該ヒータの周囲に設けられ
た側部保温筒とを備えた結晶成長装置において、 前記側部保温筒の上部に、上方への放熱を防止
するための断熱材が設けられていることを特徴と
する結晶成長装置。[Claims for Utility Model Registration] A crucible in which a melt layer and a solid layer of a crystal growth material are vertically separated and coexist, a heater provided around the crucible, and a heater provided around the heater. What is claimed is: 1. A crystal growth apparatus comprising: a side heat-insulating cylinder; further comprising: a heat insulating material provided above the side heat-insulating cylinder to prevent upward heat radiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990027050U JP2539336Y2 (en) | 1990-03-15 | 1990-03-15 | Crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990027050U JP2539336Y2 (en) | 1990-03-15 | 1990-03-15 | Crystal growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03120569U true JPH03120569U (en) | 1991-12-11 |
| JP2539336Y2 JP2539336Y2 (en) | 1997-06-25 |
Family
ID=31529922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990027050U Expired - Lifetime JP2539336Y2 (en) | 1990-03-15 | 1990-03-15 | Crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2539336Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
| JPS61150862U (en) * | 1985-03-06 | 1986-09-18 | ||
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
-
1990
- 1990-03-15 JP JP1990027050U patent/JP2539336Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5740119A (en) * | 1980-07-18 | 1982-03-05 | Skf Kugellagerfabriken Gmbh | Thin bearing bush made by pressdrawing |
| JPS61150862U (en) * | 1985-03-06 | 1986-09-18 | ||
| JPS62138386A (en) * | 1985-12-11 | 1987-06-22 | Shin Etsu Handotai Co Ltd | Device for pulling single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2539336Y2 (en) | 1997-06-25 |