JPH0217565U - - Google Patents
Info
- Publication number
- JPH0217565U JPH0217565U JP9558288U JP9558288U JPH0217565U JP H0217565 U JPH0217565 U JP H0217565U JP 9558288 U JP9558288 U JP 9558288U JP 9558288 U JP9558288 U JP 9558288U JP H0217565 U JPH0217565 U JP H0217565U
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- solid raw
- molecular beam
- heater
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002994 raw material Substances 0.000 claims 3
- 239000007787 solid Substances 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案に係る分子線エピタキシヤル成
長装置に用いられる分子線セルの側断面図、第２
図は同じく一部分解斜視図、第３図は一般的な分
子線エピタキシヤル成長装置の構成を示す概略図
、第４図は従来の分子線セルを示す側断面図であ
る。
２０……分子線セル、２４……るつぼ、２５…
…ヒータ。
Figure 1 is a side sectional view of a molecular beam cell used in the molecular beam epitaxial growth apparatus according to the present invention;
The figure is also a partially exploded perspective view, FIG. 3 is a schematic diagram showing the configuration of a general molecular beam epitaxial growth apparatus, and FIG. 4 is a side sectional view showing a conventional molecular beam cell. 20... Molecular beam cell, 24... Crucible, 25...
…heater.
Claims (1)
た固体原料をヒータによつて加熱して溶融、蒸発
させて得られる分子線を基板上に照射してエピタ
キシヤル成長させる分子線エピタキシヤル装置で
あつて、 上記ヒータを、上記るつぼ内に投入された固体
原料の融液面近傍にのみ配設し、この固体原料の
溶液面近傍のみを加熱して蒸発させることを特徴
とする分子線エピタキシヤル成長装置。[Claim for Utility Model Registration] Epitaxial growth is achieved by irradiating a substrate with molecular beams obtained by heating, melting and vaporizing a solid raw material placed in a crucible placed in a crystal growth chamber with a heater. A molecular beam epitaxial apparatus is provided in which the heater is disposed only in the vicinity of the melt surface of the solid raw material introduced into the crucible, and the solid raw material is heated and evaporated only in the vicinity of the solution surface. Characteristic molecular beam epitaxial growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558288U JPH0217565U (en) | 1988-07-19 | 1988-07-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558288U JPH0217565U (en) | 1988-07-19 | 1988-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0217565U true JPH0217565U (en) | 1990-02-05 |
Family
ID=31320263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9558288U Pending JPH0217565U (en) | 1988-07-19 | 1988-07-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0217565U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04224788A (en) * | 1990-12-27 | 1992-08-14 | Juki Corp | Button sewing machine |
-
1988
- 1988-07-19 JP JP9558288U patent/JPH0217565U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04224788A (en) * | 1990-12-27 | 1992-08-14 | Juki Corp | Button sewing machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU1614488A (en) | Container for microwave heating including means for modifying microwave heating distribution, and method of using same | |
| JPH0217565U (en) | ||
| JP2771215B2 (en) | Crucible for molecular beam source and method for forming molecular beam epitaxial growth film using the same | |
| JPH0261965U (en) | ||
| JPH03120569U (en) | ||
| JPS63121427U (en) | ||
| JPS6421072A (en) | Apparatus for melting and evaporating material | |
| JPH02132665U (en) | ||
| JPH0322067U (en) | ||
| JPH03115668U (en) | ||
| JPS62114056U (en) | ||
| JPH0342913U (en) | ||
| JPS62126371U (en) | ||
| JPH0189954U (en) | ||
| JPS6329926U (en) | ||
| JPS6324250U (en) | ||
| JPS6371528U (en) | ||
| JPS6315921U (en) | ||
| JPS6455376A (en) | Crucible for vapor deposition | |
| JPH01140155U (en) | ||
| JPS6323296U (en) | ||
| JPS6487591A (en) | Production of crucible for pulling up semiconductor | |
| JPS62198266U (en) | ||
| JPS6369166U (en) | ||
| JPS61176257U (en) |