JPH0261965U - - Google Patents
Info
- Publication number
- JPH0261965U JPH0261965U JP14025488U JP14025488U JPH0261965U JP H0261965 U JPH0261965 U JP H0261965U JP 14025488 U JP14025488 U JP 14025488U JP 14025488 U JP14025488 U JP 14025488U JP H0261965 U JPH0261965 U JP H0261965U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- raw material
- single crystal
- heater
- material melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案に係る単結晶製造装置の一実施
例の縦断端面図、第２図は従来の装置の縦断端面
図である。
１……るつぼ、２……主ヒータ、３……原料融
液、４……引上げ軸、５……単結晶、８……結晶
放射熱制御用ヒータ、９……雰囲気温度制御用ヒ
ータ。
FIG. 1 is a longitudinal sectional end view of an embodiment of a single crystal manufacturing apparatus according to the present invention, and FIG. 2 is a longitudinal sectional end view of a conventional apparatus. 1... Crucible, 2... Main heater, 3... Raw material melt, 4... Pulling shaft, 5... Single crystal, 8... Crystal radiation heat control heater, 9... Atmosphere temperature control heater.
Claims (1)
を得、該原料融液から単結晶を引上げて製造する
単結晶製造装置において、前記るつぼの直上部に
は結晶放射熱制御用ヒータが設けられ、前記るつ
ぼの上部側方には雰囲気温度制御用ヒータが設け
られていることを特徴とする単結晶製造装置。 In a single crystal production apparatus that heats the raw material in a crucible with a main heater to obtain a raw material melt, and produces a single crystal by pulling it from the raw material melt, a heater for crystal radiation heat control is provided directly above the crucible. A single crystal manufacturing apparatus characterized in that a heater for atmospheric temperature control is provided on an upper side of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14025488U JPH0261965U (en) | 1988-10-27 | 1988-10-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14025488U JPH0261965U (en) | 1988-10-27 | 1988-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0261965U true JPH0261965U (en) | 1990-05-09 |
Family
ID=31404256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14025488U Pending JPH0261965U (en) | 1988-10-27 | 1988-10-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0261965U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013542169A (en) * | 2010-11-15 | 2013-11-21 | エルジー シルトロン インコーポレイテッド | Sapphire ingot growth equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046998A (en) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | Pulling up of single crystal and its device |
| JPS60221391A (en) * | 1984-04-18 | 1985-11-06 | Toshiba Corp | Device for growing compound semiconductor single crystal |
| JPS60239389A (en) * | 1984-05-11 | 1985-11-28 | Sumitomo Electric Ind Ltd | Pulling device for single crystal |
| JPH01242489A (en) * | 1988-03-23 | 1989-09-27 | Nippon Mining Co Ltd | Single crystal growth apparatus |
-
1988
- 1988-10-27 JP JP14025488U patent/JPH0261965U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046998A (en) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | Pulling up of single crystal and its device |
| JPS60221391A (en) * | 1984-04-18 | 1985-11-06 | Toshiba Corp | Device for growing compound semiconductor single crystal |
| JPS60239389A (en) * | 1984-05-11 | 1985-11-28 | Sumitomo Electric Ind Ltd | Pulling device for single crystal |
| JPH01242489A (en) * | 1988-03-23 | 1989-09-27 | Nippon Mining Co Ltd | Single crystal growth apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013542169A (en) * | 2010-11-15 | 2013-11-21 | エルジー シルトロン インコーポレイテッド | Sapphire ingot growth equipment |