JPS6283877U - - Google Patents

Info

Publication number
JPS6283877U
JPS6283877U JP16567685U JP16567685U JPS6283877U JP S6283877 U JPS6283877 U JP S6283877U JP 16567685 U JP16567685 U JP 16567685U JP 16567685 U JP16567685 U JP 16567685U JP S6283877 U JPS6283877 U JP S6283877U
Authority
JP
Japan
Prior art keywords
temperature
heater
heating
single crystal
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16567685U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16567685U priority Critical patent/JPS6283877U/ja
Publication of JPS6283877U publication Critical patent/JPS6283877U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の単結晶育成装置の実施例のブ
ロツク図である。 なお、1:るつぼ、5:主加熱ヒータ、6,7
:補助ヒータ、8,9,10:温度感知器。
FIG. 1 is a block diagram of an embodiment of the single crystal growth apparatus of the present invention. In addition, 1: crucible, 5: main heater, 6, 7
: Auxiliary heater, 8, 9, 10: Temperature sensor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 加熱ヒータ5で加熱される結晶原料を融解する
るつぼ1の側壁に添設された温度検知器8で検知
された温度で前記加熱ヒータの加熱が制御される
単結晶育成装置において、主加熱ヒータ5と複数
個の補助加熱ヒータ6,7を設けるとともにそれ
ぞれの加熱温度を検知する温度感知器8,9,1
0の温度で作動し加熱を制御する自動温度調節器
AT,AT,ATをを設け、且つ前記全自
動温度調節器AT,AT,ATを一括総合
して制御するプログラマPGを設けてなる単結晶
育成装置。
In a single crystal growth apparatus in which the heating of the heater is controlled by the temperature detected by a temperature detector 8 attached to the side wall of the crucible 1 that melts the crystal raw material heated by the heater 5, the main heater 5 and a plurality of auxiliary heaters 6, 7, and temperature sensors 8, 9, 1 for detecting the respective heating temperatures.
A programmer PG which is provided with automatic temperature controllers AT 1 , AT 2 , AT 3 that operate at a temperature of 0 and controls heating, and which collectively controls the fully automatic temperature controllers AT 1 , AT 2 , AT 3 . A single crystal growth device equipped with
JP16567685U 1985-10-30 1985-10-30 Pending JPS6283877U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16567685U JPS6283877U (en) 1985-10-30 1985-10-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16567685U JPS6283877U (en) 1985-10-30 1985-10-30

Publications (1)

Publication Number Publication Date
JPS6283877U true JPS6283877U (en) 1987-05-28

Family

ID=31095926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16567685U Pending JPS6283877U (en) 1985-10-30 1985-10-30

Country Status (1)

Country Link
JP (1) JPS6283877U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380181A (en) * 1989-08-24 1991-04-04 Mitsubishi Monsanto Chem Co Device for producing single crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137399A (en) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus of growing low-dislocation density single crystal
JPS6027685A (en) * 1983-07-19 1985-02-12 Sumitomo Electric Ind Ltd Method for controlling multistage heater

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137399A (en) * 1983-01-28 1984-08-07 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus of growing low-dislocation density single crystal
JPS6027685A (en) * 1983-07-19 1985-02-12 Sumitomo Electric Ind Ltd Method for controlling multistage heater

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380181A (en) * 1989-08-24 1991-04-04 Mitsubishi Monsanto Chem Co Device for producing single crystal

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