JPS60221391A - Device for growing compound semiconductor single crystal - Google Patents

Abstract

PURPOSE:To grow a high-quality compd. semiconductor single crystal by separating a high-pressure vessel into three parts, making the intermediate part freely exchangeable, and providing a temp. controlling part consisting of a heating member which are separated in correspondence with the intermediate part. CONSTITUTION:A high-pressure vessel 26 of a device 35 for growing compd. semiconductor single crystals is separated into three parts so that an intermediate vessel 26b may be put and held between an upper vessel 26a and a lower vessel 26c. In addition, a heater 27 and a heat insulating member 28 are also separated in correspondence with the intermediate vessel 26b and the lower vessel 26c. Accordingly, the intermediate vessel 26b and its corresponding upper heater 27a and upper heat insulating member 28b can be easily changed into specified shapes, and a control part constituting a desired hot zone can be fromed. Consequently, the temp. control can be strictly carried out, when a single crystal 22 to be pulled up by a pulling shaft 23 is grown.

Description

[Detailed description of the invention] [Field of invention] The present invention relates to a compound semiconductor single crystal growth apparatus.

[Technical background of the invention]

2. Description of the Related Art Conventionally, a compound semiconductor single crystal growth apparatus having a structure shown in FIG. 1, for example, has been used. In the figure, 1 is a crucible containing a semiconductor material melt 2. A pulling shaft 4 for pulling up the single crystal 3 is provided above the opening of the crucible 1 so as to be movable up and down. A liquid surface coating agent 5 is provided on the surface of the semiconductor material melt 2 . The crucible 1 is supported by a support shaft 6. A heater 7 is provided around the crucible 1 except for the opening thereof. A heat retaining member 8 is provided outside the heater 7. A high pressure resistant container 9 that accommodates the crucible 1 is provided on the outside of the heat retaining member 8 . A cold W pipe 10 is attached to the outer surface of the high pressure container 9. In the figure, reference numeral 11 denotes an electrode that penetrates the high pressure container 9 and the heat insulating member 8 and is connected to the heater 7.

On the compound semiconductor single crystal growth apparatus configured in this way,
? - is GaP containing components with high vapor pressure such as P and A8
, single crystal growth of compound semiconductors such as GaAs and InP,
This is carried out by introducing a gas such as N2 or Ar into the high pressure container 9 and using 8203 as the liquid surface coating agent 5. For this reason, it is necessary to strictly control temperature during single crystal growth.

(Problems with the Background Art) This temperature control is performed by adjusting the hot zone provided in the high pressure container 9, that is, the heating area formed by the heater 7 and the heat insulating member 8. ing. However, since the shape and structure of the high pressure container 9 are almost determined at the manufacturing stage, it is extremely difficult to adjust the hot zone. Incidentally, in the high pressure container 9 which has one built-in heater 7, it is extremely difficult to attach another auxiliary heater. Furthermore, since the heat retaining member 8 is also limited in height and width, its shape can only be adjusted within these limits. If the type of heater 7 and heat insulating member 8 is adjusted beyond these ranges, the shape of high pressure container 9,
The structure must be modified, which increases the price.

In this way, the temperature distribution within the high pressure container 9 cannot be changed significantly, and the temperature cannot be strictly controlled during single crystal growth. As a result, there was a problem in that high quality single crystals could not be easily produced.

[Purpose of the invention]

The present invention has been made in consideration of this point, and provides a compound semiconductor monomer that can easily control the temperature during the production of single crystals by providing a temperature control section in a high-pressure container to obtain high-quality products. Its purpose is to provide a crystal growth device.

[Summary of the invention]

The present invention divides a high-pressure container into three parts, makes the middle part freely replaceable, and provides a temperature control part that can adjust the capacity of heating means and cooling means, thereby controlling the temperature during the production of single crystals. This is a compound semiconductor single crystal growth device that can easily produce high-quality products.

[Example of invention]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. 20 in the figure is a crucible containing a semiconductor material melt 21. Above the frontage of the crucible 20, a single crystal 2
A pull-up shaft 23 for pulling up 2 is provided so as to be able to move up and down freely.

A liquid surface coating agent 24 is provided on the surface of the semiconductor material melt 21 .

The crucible 20 is supported by a support shaft 25. The crucible 20, the pulling shaft 23, and the support shaft 25 are connected to the high pressure container 26.
is housed within. The high pressure container 26 is an upper container 26
a1 intermediate volume! 26b and a lower container 26c, which are detachably attached to each other by a flange (not shown). A heater 27 and a heat insulating member 28 are housed in a double structure between the high pressure container 26 and the crucible 20 so as to surround the crucible 20. Heater 2
7 and the heat insulating member 28 are connected to the intermediate container 26b and the lower container 2.
6c, it is divided into an upper heater 27a, a lower heater 27b, an upper heat retaining member 28a, and a lower heat retaining member 28b. Electrodes 29 inserted through the intermediate container 26b and the lower container 26c are connected to the upper heater 27a and the lower heater 27b, respectively. A cooling pipe 30 is attached to the outer peripheral surface of the high pressure container 26.

The cooling pipe 30 is also divided into three parts corresponding to the upper container 26a1, the intermediate container 26b, and the lower container 26c.

Compound semiconductor single crystal growth apparatus 11 configured in this way
According to the publication, the high pressure container 26 has a three-part structure in which an intermediate container 26b is sandwiched between an upper container 26a and a lower container 26C. Furthermore, the heater 27 and the heat retaining member 28 are also
It is divided into an intermediate container 26b and a lower container 26c. Therefore, the shapes of the intermediate container 26b and the corresponding upper heater 27a1 and upper heat retaining member 28a can be easily changed to predetermined shapes to form a control section that configures a desired hot zone. As a result, temperature control during crystal growth of the single crystal body 22 pulled up by the pulling shaft 23 can be made stricter.

Therefore, a high quality single crystal body 22 can be easily obtained.

As shown in FIG. 3, the temperature control unit composed of the upper heater 27a and the upper heat insulating member 28a has the upper heater 27a1 shaped to face the upper outer circumferential surface of the crucible 2o, and is integrated with the lower heater 27b1. It may be configured with a long upper heat retaining member 28a1 so as to cover it. Further, as shown in FIG. 4, the upper heater 27a2 is installed above so as to face the entrance of the crucible 20, and the upper heat insulating member 28a2
It is also possible to use a temperature control section that covers the periphery of the crucible 20. Further, as shown in FIG. 5, the upper heater 27a3
The temperature control unit may be installed so as to cover the entire periphery of the crucible 20, and the upper heat insulating member 28a3 may be installed to cover the periphery of the upper heater 27a3.

〔Effect of the invention〕

As explained above, according to the compound semiconductor single crystal growth apparatus according to the present invention, it is possible to easily control the temperature during the production of a single crystal and obtain a high quality product.

[Brief explanation of drawings]

FIG. 1 is an explanatory diagram showing a schematic configuration of a conventional compound semiconductor single crystal growth apparatus, FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, and FIGS. FIG. 3 is an explanatory diagram showing a schematic configuration of another embodiment of the invention. 20... Crucible, 21... Semiconductor material melt, 22.
... Single crystal, 23... Pulling shaft, 24... Liquid surface coating agent, 25... Support shaft, 26... High pressure resistant container, 26a
... Upper containers 26a, 26b... Middle containers, 26b
... lower container, 27 ... heater, 27a ... upper heater, 27b ... lower heater, 28 ... heat retention member, 28a ... upper heat retention member, 28b ... lower heat retention member, 29 ...Electrode, 30...Cooling pipe 30.35...
・Compound semiconductor single crystal growth equipment. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 3 Figure 4

Claims (1)

[Claims] a crucible that accommodates a semiconductor material melt, a support shaft that supports the crucible, a pulling shaft provided above an opening of the crucible facing the semiconductor material melt, and a divided upper container; a high pressure resistant container consisting of an intermediate container and a lower container, which are integrally connected to accommodate the pulling shaft, the crucible, and the support shaft; 1. A compound semiconductor single crystal growth apparatus comprising a temperature control section consisting of a divided heating member and a heat insulating member.