JPS6255573U - - Google Patents
Info
- Publication number
- JPS6255573U JPS6255573U JP14435985U JP14435985U JPS6255573U JP S6255573 U JPS6255573 U JP S6255573U JP 14435985 U JP14435985 U JP 14435985U JP 14435985 U JP14435985 U JP 14435985U JP S6255573 U JPS6255573 U JP S6255573U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- silicon carbide
- raw material
- single crystal
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000008022 sublimation Effects 0.000 claims 1
- 238000000859 sublimation Methods 0.000 claims 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図はこの考案の炭化ケイ素単結晶成長装置
の１実施例の切断正面図、第２図および第３図は
それぞれ従来の炭化ケイ素単結晶成長装置の切断
正面図である。
１３……るつぼ、１４……ＳｉＣ原材料、１６
……流通路、１７……成長容器、２０……基板。
FIG. 1 is a cutaway front view of one embodiment of the silicon carbide single crystal growth apparatus of this invention, and FIGS. 2 and 3 are cutaway front views of conventional silicon carbide single crystal growth apparatuses, respectively. 13... Crucible, 14... SiC raw material, 16
...Flow path, 17...Growth container, 20...Substrate.
Claims (1)
なるるつぼと、前記るつぼを加熱して前記原材料
を昇華させる加熱手段と、炭化ケイ素単結晶から
なる基板を収納し前記るつぼ外に配設されたグラ
フアイトからなる成長容器と、前記るつぼの内部
と前記容器の内部とを連通した前記原材料の昇華
ガスの流通路とを備えた炭化ケイ素単結晶成長装
置。 A crucible made of graphite containing a silicon carbide raw material, a heating means for heating the crucible to sublimate the raw material, and a graphite containing a substrate made of a silicon carbide single crystal and disposed outside the crucible. A silicon carbide single crystal growth apparatus comprising: a growth container; and a flow path for sublimation gas of the raw material, which communicates the inside of the crucible with the inside of the container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14435985U JPH031486Y2 (en) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14435985U JPH031486Y2 (en) | 1985-09-20 | 1985-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6255573U true JPS6255573U (en) | 1987-04-06 |
| JPH031486Y2 JPH031486Y2 (en) | 1991-01-17 |
Family
ID=31054884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14435985U Expired JPH031486Y2 (en) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH031486Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010030828A (en) * | 2008-07-28 | 2010-02-12 | Bridgestone Corp | Production method of silicon carbide single crystal and apparatus |
-
1985
- 1985-09-20 JP JP14435985U patent/JPH031486Y2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010030828A (en) * | 2008-07-28 | 2010-02-12 | Bridgestone Corp | Production method of silicon carbide single crystal and apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH031486Y2 (en) | 1991-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6255573U (en) | ||
| JPH031485Y2 (en) | ||
| JPS63186775U (en) | ||
| JPS63140619U (en) | ||
| JPS6124472U (en) | Sublimation crystal growth equipment | |
| JPS6333623U (en) | ||
| JPH03120569U (en) | ||
| JPS6280325U (en) | ||
| JPH01102161U (en) | ||
| JPS62114628U (en) | ||
| JPH0456766U (en) | ||
| JPS61172168U (en) | ||
| JPH03115668U (en) | ||
| JPS63167725U (en) | ||
| JPS6215573U (en) | ||
| JPH0211166U (en) | ||
| JPH0246868U (en) | ||
| JPS6329926U (en) | ||
| JPH0198171U (en) | ||
| JPH0437266U (en) | ||
| JPS63183273U (en) | ||
| JPS6010197U (en) | Crucible for single crystal growth | |
| JPH0187171U (en) | ||
| JPS61131828U (en) | ||
| JPS58160273U (en) | Crucible for single crystal growth |