JPS63167725U - - Google Patents
Info
- Publication number
- JPS63167725U JPS63167725U JP6186587U JP6186587U JPS63167725U JP S63167725 U JPS63167725 U JP S63167725U JP 6186587 U JP6186587 U JP 6186587U JP 6186587 U JP6186587 U JP 6186587U JP S63167725 U JPS63167725 U JP S63167725U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor phase
- growth
- phase epitaxial
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims 3
- 239000012808 vapor phase Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000002994 raw material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の一実施例の断面図、第２図は
ガス導入筒の斜視図、第３図は従来装置の一例を
示す断面図である。
１……反応管、２……加熱炉、３，４……成長
室、５，６……原料ソース、７，８……原料ガス
導入管、９……基板保持治具、１０……基板、１
１……ガス導入筒。
FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a perspective view of a gas introduction tube, and FIG. 3 is a sectional view of an example of a conventional device. 1... Reaction tube, 2... Heating furnace, 3, 4... Growth chamber, 5, 6... Raw material source, 7, 8... Raw material gas introduction tube, 9... Substrate holding jig, 10... Substrate ,1
1...Gas introduction tube.
Claims (1)
て該基板上に結晶成長させる気相エピタキシアル
成長装置において、角回転により成長室の各々に
選択的に接続され各成長室から基板に至るガス流
の流路面積を拡径するガス導入筒を備えたことを
特徴とする気相エピタキシアル成長装置。 In a vapor phase epitaxial growth apparatus in which gases from multiple growth chambers are sequentially brought into contact with a substrate to grow crystals on the substrate, a gas that is selectively connected to each of the growth chambers by angular rotation and reaches the substrate from each growth chamber. A vapor phase epitaxial growth apparatus characterized by being equipped with a gas introduction tube that expands the flow path area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6186587U JPS63167725U (en) | 1987-04-23 | 1987-04-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6186587U JPS63167725U (en) | 1987-04-23 | 1987-04-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63167725U true JPS63167725U (en) | 1988-11-01 |
Family
ID=30895596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6186587U Pending JPS63167725U (en) | 1987-04-23 | 1987-04-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63167725U (en) |
-
1987
- 1987-04-23 JP JP6186587U patent/JPS63167725U/ja active Pending