JPS6241075U - - Google Patents
Info
- Publication number
- JPS6241075U JPS6241075U JP13194085U JP13194085U JPS6241075U JP S6241075 U JPS6241075 U JP S6241075U JP 13194085 U JP13194085 U JP 13194085U JP 13194085 U JP13194085 U JP 13194085U JP S6241075 U JPS6241075 U JP S6241075U
- Authority
- JP
- Japan
- Prior art keywords
- transparent tube
- focal point
- infrared
- raw material
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案にかかる赤外線集中加熱炉の一
実施例を示す説明図、第２図Ａ，Ｂ、第３図Ａ，
Ｂ、第４図Ａ，Ｂ、第５図Ａ，Ｂはそれぞれ本考
案で用いるに好適な光分散領域の形成構造の例を
示す説明図、第６図は本考案による温度勾配の一
例を示す説明図である。
１０……回転楕円鏡、１２……光源、１４……
透明管、１６……原料棒、２０……光分散領域。
Fig. 1 is an explanatory diagram showing one embodiment of an infrared concentrated heating furnace according to the present invention, Fig. 2 A, B, Fig. 3 A,
B, Figures 4A and B, and Figures 5A and B are explanatory diagrams showing examples of formation structures of light dispersion regions suitable for use in the present invention, respectively, and Figure 6 shows an example of the temperature gradient according to the present invention. It is an explanatory diagram. 10...Spheroidal mirror, 12...Light source, 14...
Transparent tube, 16...raw material rod, 20...light dispersion area.
Claims (1)
れ他方の焦点を通るように透明管が挿通されて、
該透明管の内部に原料棒を挿入し赤外線集中加熱
により局部的に溶融し結晶成長させる装置におい
て、前記透明管の一部の溶融帯域から成長結晶側
にかけて光分散領域を形成し、内部の温度勾配を
緩やかに制御することを特徴とする赤外線集中加
熱炉。 A light source is placed at one focal point of the spheroidal mirror, and a transparent tube is inserted through the other focal point.
In this device, a raw material rod is inserted into the transparent tube and locally melted by concentrated infrared heating to grow crystals.A light dispersion area is formed from a melting zone of a part of the transparent tube to the growing crystal side, and the internal temperature is An infrared central heating furnace characterized by gentle slope control.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13194085U JPS6241075U (en) | 1985-08-29 | 1985-08-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13194085U JPS6241075U (en) | 1985-08-29 | 1985-08-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6241075U true JPS6241075U (en) | 1987-03-11 |
Family
ID=31030860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13194085U Pending JPS6241075U (en) | 1985-08-29 | 1985-08-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6241075U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019013301A1 (en) * | 2017-07-12 | 2019-01-17 | 国立研究開発法人理化学研究所 | Single-crystal growth apparatus |
| JP2019019046A (en) * | 2017-07-12 | 2019-02-07 | 国立研究開発法人理化学研究所 | Single crystal growth apparatus |
-
1985
- 1985-08-29 JP JP13194085U patent/JPS6241075U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019013301A1 (en) * | 2017-07-12 | 2019-01-17 | 国立研究開発法人理化学研究所 | Single-crystal growth apparatus |
| JP2019019046A (en) * | 2017-07-12 | 2019-02-07 | 国立研究開発法人理化学研究所 | Single crystal growth apparatus |
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