JPS61179551A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61179551A JPS61179551A JP1877685A JP1877685A JPS61179551A JP S61179551 A JPS61179551 A JP S61179551A JP 1877685 A JP1877685 A JP 1877685A JP 1877685 A JP1877685 A JP 1877685A JP S61179551 A JPS61179551 A JP S61179551A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- gate electrode
- w5si3
- sio2
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000001312 dry etching Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000001020 plasma etching Methods 0.000 abstract description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910009052 W5Si3 Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000007493 shaping process Methods 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910001258 titanium gold Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877685A JPS61179551A (ja) | 1985-02-04 | 1985-02-04 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877685A JPS61179551A (ja) | 1985-02-04 | 1985-02-04 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179551A true JPS61179551A (ja) | 1986-08-12 |
| JPH0461496B2 JPH0461496B2 (enrdf_load_stackoverflow) | 1992-10-01 |
Family
ID=11981033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1877685A Granted JPS61179551A (ja) | 1985-02-04 | 1985-02-04 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179551A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5030589A (en) * | 1987-10-22 | 1991-07-09 | Mitsubishi Denki Kabushiki Kaisha | Production method for a semiconductor device |
-
1985
- 1985-02-04 JP JP1877685A patent/JPS61179551A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5030589A (en) * | 1987-10-22 | 1991-07-09 | Mitsubishi Denki Kabushiki Kaisha | Production method for a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0461496B2 (enrdf_load_stackoverflow) | 1992-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |