JPS6117497A - 炭化硅素単結晶膜の製造方法 - Google Patents

炭化硅素単結晶膜の製造方法

Info

Publication number
JPS6117497A
JPS6117497A JP59138569A JP13856984A JPS6117497A JP S6117497 A JPS6117497 A JP S6117497A JP 59138569 A JP59138569 A JP 59138569A JP 13856984 A JP13856984 A JP 13856984A JP S6117497 A JPS6117497 A JP S6117497A
Authority
JP
Japan
Prior art keywords
single crystal
crystal film
silicon carbide
film
aluminum nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59138569A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0143720B2 (enExample
Inventor
Shunji Misawa
俊司 三沢
Sadaji Yoshida
吉田　貞史
Shunichi Gonda
権田　俊一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59138569A priority Critical patent/JPS6117497A/ja
Publication of JPS6117497A publication Critical patent/JPS6117497A/ja
Publication of JPH0143720B2 publication Critical patent/JPH0143720B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59138569A 1984-07-04 1984-07-04 炭化硅素単結晶膜の製造方法 Granted JPS6117497A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59138569A JPS6117497A (ja) 1984-07-04 1984-07-04 炭化硅素単結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59138569A JPS6117497A (ja) 1984-07-04 1984-07-04 炭化硅素単結晶膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6117497A true JPS6117497A (ja) 1986-01-25
JPH0143720B2 JPH0143720B2 (enExample) 1989-09-22

Family

ID=15225197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59138569A Granted JPS6117497A (ja) 1984-07-04 1984-07-04 炭化硅素単結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6117497A (enExample)

Also Published As

Publication number Publication date
JPH0143720B2 (enExample) 1989-09-22

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Legal Events

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