JPS61163677A - Mim structure - Google Patents
Mim structureInfo
- Publication number
- JPS61163677A JPS61163677A JP60004574A JP457485A JPS61163677A JP S61163677 A JPS61163677 A JP S61163677A JP 60004574 A JP60004574 A JP 60004574A JP 457485 A JP457485 A JP 457485A JP S61163677 A JPS61163677 A JP S61163677A
- Authority
- JP
- Japan
- Prior art keywords
- section
- metal
- contact
- insulator
- brought
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- 239000012212 insulator Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 241000479907 Devia <beetle> Species 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示装置におけるＭＩＭの電極構造に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrode structure of MIM in a liquid crystal display device.
従来の液晶表示装置におけるＭＩＭ電極構造は論文「’
ｆ’ｈｅ Ｏｐｔｉｍｉｊａｔｉｏｎ Ｏｆ ｍｅｔａ
ｌ−（ｎｓｕｌａｔｏｒ−ｍｅｔａｌ Ｎｏｎ１ｉｎｅ
ａｒ Ｄｅｖｉａｅｓ ｆｏｒ ＨＢｅ ｉｎ ｍｕｌ
ｔｉｐｌ−ｅｘｓｄ Ｌｉｑｕｉｄ ０ｒｙｓｔａｌ
Ｄｉｓｐｌａｙｓ Ｊ工ＩＩ！１ｍ ＴＲＡＮ８ＡＯ
Ｔ工ＯＭ８ ＯＮ ＥＬＩ！ｉ０１０ＴＲ０’ＭＶ
ＸＯＭＢ 、 ＶＯＬ、１！Ｄ−２８，ＮＯ，６，Ｊ
Ｕ１１１！！１９８１ の様に（第２図）
該非線形素子（ＭＩＭ素子）■を形成する絶縁体■と接
し表示画素■と連なる金属■の形状において該表示画素
電極■と接合する部分の金属■の太さが絶縁体■と接合
する部分の金属の太さと同じであった。The MIM electrode structure in conventional liquid crystal display devices is described in the paper "'
f'he Optimization Of meta
l-(nsulator-metal Non1ine
ar Deviaes for HBe in mul
tipl-exsd Liquid 0rystal
Displays J Engineering II! 1m TRAN8AO
T-works OM8 ON ELI! i010TR0'MV
XOMB, VOL, 1! D-28, NO, 6, J
U111! ! 1981 (Fig. 2) In the shape of the metal ■ that is in contact with the insulator ■ forming the nonlinear element (MIM element) ■ and connected to the display pixel ■, the thickness of the metal ■ at the part that joins with the display pixel electrode ■. was the same as the thickness of the metal at the part connected to the insulator ■.
〔発明が解決しようとしている問題点〕しかしながら前
述の従来技術では、金属と表示画素部との接合部分にお
いて異種金属の接合部分で断線するという問題点を有す
る。[Problems to be Solved by the Invention] However, the above-mentioned prior art has a problem in that the wire breaks at the joint between dissimilar metals at the joint between the metal and the display pixel portion.
そこで本発明は、この様な問題点を解決するものでその
目的とする所は、液晶表示装置におけるＭＩＭの電極構
造における金属と表示画素部の間の断線を極力押える構
造をもつ事を特徴とする。The present invention is intended to solve these problems, and its purpose is to have a structure that minimizes disconnection between the metal and the display pixel portion in the MIM electrode structure of a liquid crystal display device. do.
他方この金属■を全体的に太く出来ない理由としては、
該非線形素子の面積は、より小さくなければ十分な画像
特性が得られないためである。On the other hand, the reason why this metal ■ cannot be made thicker overall is as follows.
This is because sufficient image characteristics cannot be obtained unless the area of the nonlinear element is smaller.
本発明の上記の構成によれば従来発生率が０．１％発生
していた断線を１００１％まで改善する事が出来る構造
である。According to the above configuration of the present invention, it is possible to improve the occurrence rate of wire breakage, which conventionally occurred at 0.1%, to 1001%.
第１図は、本発明の実施例における平面図であり、金属
の絶縁体と接する部分と表示画素部と接する部分との太
みの比が約２倍となっている。FIG. 1 is a plan view of an embodiment of the present invention, in which the thickness ratio of the portion in contact with the metal insulator and the portion in contact with the display pixel portion is approximately twice.
第５図は、さらに別の実施例である。FIG. 5 shows yet another embodiment.
以上述べた様に本発明によれば非線形素子を形成する金
属の電極形状を変更することによって断線のない液晶表
示装置が得られるという効果を有する。As described above, the present invention has the effect that a liquid crystal display device without disconnection can be obtained by changing the shape of the metal electrode forming the nonlinear element.
第１図は本発明のＭＩＭ構造の一実施例を示す平面図（
α）と断面図＜ｂ＞
第２図は従来のＭＩＭ構造を示す平面図第３図は本発明
による他の実施例を示す平面図１・・・・・・ＭＸＭ素
子部分
−２・・・・・・絶縁体・・・・・・・・・・・・例、
Ｔａ１０ｇ３・・・・・・表示画素部・・・・・・例、
工、Ｔ、Ｏｏｒ酸化スズ４・・・・・・金 属・・・・
・・・・・・・・例、Ｏｒ５・・・・・・電 極・・・
・・・・・・・・・例、Ｔａ以 上FIG. 1 is a plan view showing an embodiment of the MIM structure of the present invention (
α) and cross-sectional view <b> FIG. 2 is a plan view showing a conventional MIM structure FIG. 3 is a plan view showing another embodiment according to the present invention 1...MXM element portion-2...・・・Insulator・・・・・・・・・Example,
Ta10g3...Display pixel section...Example,
Engineering, T, Oor tin oxide 4...Metal...
......Example, Or5... Electrode...
・・・・・・・・・Example, Ta or more
Claims (1)
縁基板の液晶層と接する基板面上に金属−絶縁体−金属
の三層構造から成る非線形素子を形成し、該非線形素子
を用いて表示画素部より液晶層に対する印加電圧を制御
する機構を有する液晶表示体に於いて、該非線形素子を
形成する絶縁体と接し表示画素に連なる金属の形状にお
いて、該表示画素電極と接合する部分の太さが絶縁体に
接する部分の太さよりもより太いことを特徴とするＭＩ
Ｍ構造。A nonlinear element having a three-layer structure of metal-insulator-metal is formed on the surface of at least one of the two insulating substrates supporting the liquid crystal layer that is in contact with the liquid crystal layer, and display is performed using the nonlinear element. In a liquid crystal display that has a mechanism for controlling the voltage applied to the liquid crystal layer from the pixel part, the thickness of the part that connects with the display pixel electrode is MI characterized by the thickness being thicker than the thickness of the part in contact with the insulator.
M structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60004574A JP2519883B2 (en) | 1985-01-14 | 1985-01-14 | MIM structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60004574A JP2519883B2 (en) | 1985-01-14 | 1985-01-14 | MIM structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61163677A true JPS61163677A (en) | 1986-07-24 |
| JP2519883B2 JP2519883B2 (en) | 1996-07-31 |
Family
ID=11587803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60004574A Expired - Lifetime JP2519883B2 (en) | 1985-01-14 | 1985-01-14 | MIM structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2519883B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154034A (en) * | 1987-12-10 | 1989-06-16 | Seiko Epson Corp | Nonlinear element |
-
1985
- 1985-01-14 JP JP60004574A patent/JP2519883B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| JAPAN DISPLAY83.PROC OF THE 3RD INTL DISPLAY CONF=1983 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154034A (en) * | 1987-12-10 | 1989-06-16 | Seiko Epson Corp | Nonlinear element |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2519883B2 (en) | 1996-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |