JPS6116345B2 - - Google Patents
Info
- Publication number
- JPS6116345B2 JPS6116345B2 JP3718282A JP3718282A JPS6116345B2 JP S6116345 B2 JPS6116345 B2 JP S6116345B2 JP 3718282 A JP3718282 A JP 3718282A JP 3718282 A JP3718282 A JP 3718282A JP S6116345 B2 JPS6116345 B2 JP S6116345B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- metal plate
- melting point
- metal
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000002844 melting Methods 0.000 claims description 19
- 230000008018 melting Effects 0.000 claims description 14
- 239000007769 metal material Substances 0.000 claims description 11
- 238000005477 sputtering target Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157968A JPS58157968A (ja) | 1983-09-20 |
| JPS6116345B2 true JPS6116345B2 (enrdf_load_stackoverflow) | 1986-04-30 |
Family
ID=12490440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3718282A Granted JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157968A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0276962A1 (en) * | 1987-01-27 | 1988-08-03 | Machine Technology Inc. | Cooling device for a sputter target and source |
| JPH062217Y2 (ja) * | 1989-05-10 | 1994-01-19 | 湯浅電池株式会社 | 鉛蓄電池の端子部 |
| DE19535894A1 (de) * | 1995-09-27 | 1997-04-03 | Leybold Materials Gmbh | Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung |
| DE69930859T2 (de) * | 1998-09-11 | 2007-05-16 | Tosoh SMD, Inc., Grove City | Verbindungsverfahren für ein niedrigtemperatursputtertarget und so hergestelltes niedrigtemperatursputtertarget |
-
1982
- 1982-03-11 JP JP3718282A patent/JPS58157968A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58157968A (ja) | 1983-09-20 |
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