JPS58157968A - 低融点スパッタリング・タ−ゲットの固定方法 - Google Patents
低融点スパッタリング・タ−ゲットの固定方法Info
- Publication number
- JPS58157968A JPS58157968A JP3718282A JP3718282A JPS58157968A JP S58157968 A JPS58157968 A JP S58157968A JP 3718282 A JP3718282 A JP 3718282A JP 3718282 A JP3718282 A JP 3718282A JP S58157968 A JPS58157968 A JP S58157968A
- Authority
- JP
- Japan
- Prior art keywords
- target
- metal plate
- purity
- sputtering target
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 title claims description 45
- 239000002184 metal Substances 0.000 title claims description 45
- 238000002844 melting Methods 0.000 title claims description 9
- 230000008018 melting Effects 0.000 title claims description 6
- 238000010276 construction Methods 0.000 title 1
- 239000007769 metal material Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 229910000846 In alloy Inorganic materials 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052718 tin Inorganic materials 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3718282A JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58157968A true JPS58157968A (ja) | 1983-09-20 |
| JPS6116345B2 JPS6116345B2 (enrdf_load_stackoverflow) | 1986-04-30 |
Family
ID=12490440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3718282A Granted JPS58157968A (ja) | 1982-03-11 | 1982-03-11 | 低融点スパッタリング・タ−ゲットの固定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58157968A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63227776A (ja) * | 1987-01-27 | 1988-09-22 | マシン テクノロジー インコーポレイテッド | 沈積装置用陰極／ターゲット組合体 |
| US5093215A (en) * | 1989-05-10 | 1992-03-03 | Yuasa Battery Co., Ltd. | Terminal means for lead storage battery |
| EP0770701A1 (de) * | 1995-09-27 | 1997-05-02 | LEYBOLD MATERIALS GmbH | Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung |
| JP2003535212A (ja) * | 1998-09-11 | 2003-11-25 | トーソー エスエムディー，インク． | スパッターターゲット低温接合法とそれによって製造されるターゲットアセンブリ |
-
1982
- 1982-03-11 JP JP3718282A patent/JPS58157968A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63227776A (ja) * | 1987-01-27 | 1988-09-22 | マシン テクノロジー インコーポレイテッド | 沈積装置用陰極／ターゲット組合体 |
| US5093215A (en) * | 1989-05-10 | 1992-03-03 | Yuasa Battery Co., Ltd. | Terminal means for lead storage battery |
| EP0770701A1 (de) * | 1995-09-27 | 1997-05-02 | LEYBOLD MATERIALS GmbH | Target für die Sputterkathode einer Vakuumbeschichtungsanlage und Verfahren zu seiner Herstellung |
| CN1065572C (zh) * | 1995-09-27 | 2001-05-09 | 莱博德材料有限公司 | 用于真空镀膜设备溅射阴极的靶及其制造方法 |
| JP2003535212A (ja) * | 1998-09-11 | 2003-11-25 | トーソー エスエムディー，インク． | スパッターターゲット低温接合法とそれによって製造されるターゲットアセンブリ |
| EP1115899A4 (en) * | 1998-09-11 | 2004-09-22 | Tosoh Smd Inc | METHOD FOR BINDING A LOW TEMPERATURE CATHODIC SPRAY TARGET AND TARGET SETS PRODUCED ACCORDING TO SAID METHOD |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6116345B2 (enrdf_load_stackoverflow) | 1986-04-30 |
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