JPS61163193A - 縦型エピタキシヤル気相成長装置 - Google Patents

縦型エピタキシヤル気相成長装置

Info

Publication number
JPS61163193A
JPS61163193A JP336585A JP336585A JPS61163193A JP S61163193 A JPS61163193 A JP S61163193A JP 336585 A JP336585 A JP 336585A JP 336585 A JP336585 A JP 336585A JP S61163193 A JPS61163193 A JP S61163193A
Authority
JP
Japan
Prior art keywords
susceptor
stand
elevating
vapor phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP336585A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0361632B2 (enrdf_load_html_response
Inventor
Kazuo Kamiyama
上山 和男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP336585A priority Critical patent/JPS61163193A/ja
Publication of JPS61163193A publication Critical patent/JPS61163193A/ja
Publication of JPH0361632B2 publication Critical patent/JPH0361632B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP336585A 1985-01-14 1985-01-14 縦型エピタキシヤル気相成長装置 Granted JPS61163193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP336585A JPS61163193A (ja) 1985-01-14 1985-01-14 縦型エピタキシヤル気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP336585A JPS61163193A (ja) 1985-01-14 1985-01-14 縦型エピタキシヤル気相成長装置

Publications (2)

Publication Number Publication Date
JPS61163193A true JPS61163193A (ja) 1986-07-23
JPH0361632B2 JPH0361632B2 (enrdf_load_html_response) 1991-09-20

Family

ID=11555317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP336585A Granted JPS61163193A (ja) 1985-01-14 1985-01-14 縦型エピタキシヤル気相成長装置

Country Status (1)

Country Link
JP (1) JPS61163193A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPH0361632B2 (enrdf_load_html_response) 1991-09-20

Similar Documents

Publication Publication Date Title
US4778331A (en) Carrier system for silicon wafer
US6228167B1 (en) Single crystal pulling apparatus
JP2640683B2 (ja) 単結晶棒の引上げ装置
JP2678383B2 (ja) 単結晶上装置
JPS61163193A (ja) 縦型エピタキシヤル気相成長装置
JP4450468B2 (ja) ガラスルツボのリムカット装置
KR101782541B1 (ko) 반응기 설치를 위한 수평조정방법
EP0425837A1 (en) Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method
JP3555326B2 (ja) 単結晶引上装置の保持台へのルツボの組み付け方法と、その方法に用いられる保持台組み立て装置、および保持台
JPH07172975A (ja) 単結晶引上装置用原料組み込み方法及び装置
JPH1095691A (ja) 結晶保持装置
JPS62244537A (ja) 罐巻締方法及びその装置
JP2852345B2 (ja) 単結晶成長装置及び単結晶成長方法
JP4033511B2 (ja) 基板処理装置及び方法
JPS63133519A (ja) インナ−ベルジヤ取付治具
JP2796687B2 (ja) 単結晶製造方法およびその装置
JPH0747520B2 (ja) 単結晶引き上げ装置
JPH11260783A (ja) 基板洗浄装置
CN114348917B (zh) 热场组件的装载设备、半导体工艺设备、装载系统和方法
JPH09208383A (ja) 単結晶育成装置
JP2733517B2 (ja) 熱処理装置及びそのチューブ取付方法並びにそれに用いる治具
JP4020066B2 (ja) 単結晶引上装置
JPH077329Y2 (ja) 分子線エピタキシー装置
JPH11171688A (ja) 単結晶引上げ装置
JPH11263694A (ja) 石英ルツボ反転装置及び石英ルツボ反転方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term