JPS61161948U - - Google Patents
Info
- Publication number
- JPS61161948U JPS61161948U JP4493585U JP4493585U JPS61161948U JP S61161948 U JPS61161948 U JP S61161948U JP 4493585 U JP4493585 U JP 4493585U JP 4493585 U JP4493585 U JP 4493585U JP S61161948 U JPS61161948 U JP S61161948U
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- ion
- ions
- acceleration electrode
- ionization box
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 4
- 230000001133 acceleration Effects 0.000 claims 2
- 239000000284 extract Substances 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第1図は従来技術のイオン源概略図、第2図は
本考案の邪魔板を用いたイオン源概略図である。
5…絶縁碍子内壁、6…イオンビーム、7…バ
ツフル、8…真空排気口、11…邪魔板。
FIG. 1 is a schematic diagram of a conventional ion source, and FIG. 2 is a schematic diagram of an ion source using a baffle plate of the present invention. 5...Insulator inner wall, 6...Ion beam, 7...Bassful, 8...Vacuum exhaust port, 11...Baffle plate.
Claims (1)
電圧を印加する加速電極と加速電極からイオンを
引き出す引出電極系とその間を絶縁する絶縁碍子
とによつて構成されるイオン源において、 前記の加速されたイオンビームがビーム近傍に
設置されたスリツトやバツフルに衝突して発生し
たスパツターイオンやスパツター粒子が直接に絶
縁碍子の内壁に飛来しないように邪魔板を設置す
ることを特徴とするイオン源。[Claim for Utility Model Registration] An ion system consisting of an ionization box that ionizes gas, an acceleration electrode that applies a high voltage to the ionization box, an extraction electrode system that extracts ions from the acceleration electrode, and an insulator that insulates the space between them. At the source, a baffle plate is installed to prevent the spatter ions and sputter particles generated when the accelerated ion beam collides with the slits and baffles installed near the beam from flying directly to the inner wall of the insulator. An ion source characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4493585U JPS61161948U (en) | 1985-03-29 | 1985-03-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4493585U JPS61161948U (en) | 1985-03-29 | 1985-03-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61161948U true JPS61161948U (en) | 1986-10-07 |
Family
ID=30557971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4493585U Pending JPS61161948U (en) | 1985-03-29 | 1985-03-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61161948U (en) |
-
1985
- 1985-03-29 JP JP4493585U patent/JPS61161948U/ja active Pending
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