JPS6399752U - - Google Patents
Info
- Publication number
- JPS6399752U JPS6399752U JP19515086U JP19515086U JPS6399752U JP S6399752 U JPS6399752 U JP S6399752U JP 19515086 U JP19515086 U JP 19515086U JP 19515086 U JP19515086 U JP 19515086U JP S6399752 U JPS6399752 U JP S6399752U
- Authority
- JP
- Japan
- Prior art keywords
- suppressor electrode
- faraday cage
- ion beam
- surround
- target chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Description
第１図はこの考案の一実施例を示す概略図、第
２図はその要部の一部破断斜視図、第３図は従来
例を示す概略図である。
１……ターゲツトチヤンバ、２……フアラデー
ケージ、３……第１のサプレツサ電極、４……第
２のサプレツサ電極、５……試料。
FIG. 1 is a schematic diagram showing an embodiment of this invention, FIG. 2 is a partially cutaway perspective view of the main part thereof, and FIG. 3 is a schematic diagram showing a conventional example. DESCRIPTION OF SYMBOLS 1... Target chamber, 2... Faraday cage, 3... First suppressor electrode, 4... Second suppressor electrode, 5... Sample.
Claims (1)
バ内に配置され前部開口からイオンビームが入射
する筒形のフアラデーケージと、このフアラデー
ケージの後部開口に配置した試料と、前記フアラ
デーケージの前部開口の前方位置でイオンビーム
通過領域を包囲するように配置された負電位の第
１のサプレツサ電極と、この第１のサプレツサ電
極の前方位置で前記イオンビーム通過領域を包囲
するように配置された正電位の第２のサプレツサ
電極とを備えたイオン注入装置。 A target chamber, a cylindrical Faraday cage placed in the target chamber into which an ion beam enters from the front opening, a sample placed in the rear opening of the Faraday cage, and an ion beam placed in front of the front opening of the Faraday cage. a first suppressor electrode with a negative potential arranged so as to surround the beam passing region; and a second suppressor electrode with a positive potential arranged so as to surround the ion beam passing region at a position in front of the first suppressor electrode. An ion implantation device equipped with a suppressor electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19515086U JPS6399752U (en) | 1986-12-18 | 1986-12-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19515086U JPS6399752U (en) | 1986-12-18 | 1986-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6399752U true JPS6399752U (en) | 1988-06-28 |
Family
ID=31152775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19515086U Pending JPS6399752U (en) | 1986-12-18 | 1986-12-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6399752U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008128660A (en) * | 2006-11-16 | 2008-06-05 | Nissin Ion Equipment Co Ltd | Ion beam measuring device |
| JP2011187309A (en) * | 2010-03-09 | 2011-09-22 | Nissin Ion Equipment Co Ltd | Ion beam irradiation device |
| JP2019212598A (en) * | 2018-06-01 | 2019-12-12 | 日新イオン機器株式会社 | Ion beam irradiation device |
-
1986
- 1986-12-18 JP JP19515086U patent/JPS6399752U/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008128660A (en) * | 2006-11-16 | 2008-06-05 | Nissin Ion Equipment Co Ltd | Ion beam measuring device |
| JP4605146B2 (en) * | 2006-11-16 | 2011-01-05 | 日新イオン機器株式会社 | Ion beam measurement device |
| JP2011187309A (en) * | 2010-03-09 | 2011-09-22 | Nissin Ion Equipment Co Ltd | Ion beam irradiation device |
| JP2019212598A (en) * | 2018-06-01 | 2019-12-12 | 日新イオン機器株式会社 | Ion beam irradiation device |