JPS6384867U - - Google Patents
Info
- Publication number
- JPS6384867U JPS6384867U JP18060886U JP18060886U JPS6384867U JP S6384867 U JPS6384867 U JP S6384867U JP 18060886 U JP18060886 U JP 18060886U JP 18060886 U JP18060886 U JP 18060886U JP S6384867 U JPS6384867 U JP S6384867U
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- ion beam
- implantation device
- ion
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 230000005465 channeling Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Description
第１図はこの考案の一実施例によるイオン注入
装置の構成図、第２図は実施例におけるイオン注
入の状態を示す断面図、第３図は従来のイオン注
入装置を示す構成図、第４図は従来のイオン注入
装置を用いた場合のイオン注入の状態を示す断面
図である。
１はイオン源、２は分析マグネツト、３はウエ
ハ、４はデイスク、６はイオンビーム、７はイオ
ンビーム偏向用電極、８は分析スリツト、１４は
非注入領域である。図中、同一符号は同一または
相当部分を示す。
FIG. 1 is a block diagram of an ion implanter according to an embodiment of this invention, FIG. 2 is a cross-sectional view showing the ion implantation state in the embodiment, FIG. 3 is a block diagram of a conventional ion implanter, and FIG. The figure is a cross-sectional view showing the state of ion implantation when a conventional ion implantation device is used. 1 is an ion source, 2 is an analysis magnet, 3 is a wafer, 4 is a disk, 6 is an ion beam, 7 is an electrode for deflecting the ion beam, 8 is an analysis slit, and 14 is a non-implanted region. In the drawings, the same reference numerals indicate the same or corresponding parts.
Claims (1)
ネツト以降に、ウエハに対してイオンビームをチ
ヤネリングを防止できる角度で互に反対方向から
注入できるようにするイオンビーム偏向用電極を
設けたことを特徴とするイオン注入装置。 An ion implantation device characterized in that a pre-deposition type ion implantation device is provided with an ion beam deflection electrode after the analysis magnet so that the ion beam can be implanted into the wafer from opposite directions at an angle that prevents channeling. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18060886U JPS6384867U (en) | 1986-11-24 | 1986-11-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18060886U JPS6384867U (en) | 1986-11-24 | 1986-11-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6384867U true JPS6384867U (en) | 1988-06-03 |
Family
ID=31124718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18060886U Pending JPS6384867U (en) | 1986-11-24 | 1986-11-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384867U (en) |
-
1986
- 1986-11-24 JP JP18060886U patent/JPS6384867U/ja active Pending
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