JPH0231056U - - Google Patents
Info
- Publication number
- JPH0231056U JPH0231056U JP10994288U JP10994288U JPH0231056U JP H0231056 U JPH0231056 U JP H0231056U JP 10994288 U JP10994288 U JP 10994288U JP 10994288 U JP10994288 U JP 10994288U JP H0231056 U JPH0231056 U JP H0231056U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- ion implantation
- implantation apparatus
- type
- incidence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
Description
第１図は本考案のイオン注入装置の第１の実施
例を示す概略図、第２図は半導体ウエーハへのイ
オンビームの入射角を示す概略図、第３図は本考
案の第２の実施例を示す概略図、第４図は従来の
イオン注入装置を示す概略図、第５図ａ，ｂは従
来のイオン注入装置での半導体ウエーハへのイオ
ンビームの入射角を示す概略図、第６図は半導体
ウエーハにある入射角を持つたイオンビームが注
入されたときの状態を示す図である。
１０１……真空チヤンバー、１０２……半導体
ウエーハ保持部、１０３……半導体ウエーハ、１
０４……走査電極、１０５……電磁石、３０５…
…平行平板電極、１０６，１０７，１０８，２０
８，３０８……イオンビーム。
Fig. 1 is a schematic diagram showing a first embodiment of the ion implantation apparatus of the present invention, Fig. 2 is a schematic diagram showing the incident angle of the ion beam to a semiconductor wafer, and Fig. 3 is a schematic diagram showing a second embodiment of the invention. FIG. 4 is a schematic diagram showing a conventional ion implantation device; FIGS. The figure shows a state when an ion beam having a certain incident angle is implanted into a semiconductor wafer. 101... Vacuum chamber, 102... Semiconductor wafer holding section, 103... Semiconductor wafer, 1
04...Scanning electrode, 105...Electromagnet, 305...
...Parallel plate electrode, 106, 107, 108, 20
8,308...Ion beam.
Claims (1)
するイオン注入装置において、半導体ウエーハへ
のイオンの入射角を電気的に変化させる機構を有
することを特徴とするイオン注入装置。 An ion implantation apparatus for introducing P-type or N-type impurities into a semiconductor wafer, the ion implantation apparatus having a mechanism for electrically changing the angle of incidence of ions onto the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10994288U JPH0231056U (en) | 1988-08-22 | 1988-08-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10994288U JPH0231056U (en) | 1988-08-22 | 1988-08-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0231056U true JPH0231056U (en) | 1990-02-27 |
Family
ID=31346646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10994288U Pending JPH0231056U (en) | 1988-08-22 | 1988-08-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231056U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04282549A (en) * | 1991-03-11 | 1992-10-07 | G T C:Kk | Ion source device and ion beam irradiating method and impurity dopoe method using this device |
-
1988
- 1988-08-22 JP JP10994288U patent/JPH0231056U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04282549A (en) * | 1991-03-11 | 1992-10-07 | G T C:Kk | Ion source device and ion beam irradiating method and impurity dopoe method using this device |
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