JPS637158U - - Google Patents
Info
- Publication number
- JPS637158U JPS637158U JP9681986U JP9681986U JPS637158U JP S637158 U JPS637158 U JP S637158U JP 9681986 U JP9681986 U JP 9681986U JP 9681986 U JP9681986 U JP 9681986U JP S637158 U JPS637158 U JP S637158U
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- substrate
- electrons
- applying
- collecting electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000007733 ion plating Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
図面は本考案による装置の構成を示す概略ブロ
ツク図である。
1……真空室、2……蒸発源、3……基板、4
……プラズマ発生型電子銃、5……電子捕集電極
、6……ガス導入管、7……区画室。
The drawing is a schematic block diagram showing the configuration of the device according to the present invention. 1... Vacuum chamber, 2... Evaporation source, 3... Substrate, 4
...Plasma generating electron gun, 5...Electron collection electrode, 6...Gas introduction pipe, 7...Divided chamber.
Claims (1)
源および基板を対向させて設け、前記蒸発源の周
囲に区画室を形成するように正電位を与えること
ができる電子捕集電極を配置し、この電子捕集電
極に正電位を与えることにより、蒸発源から蒸発
しイオン化され陽イオンと電子とに分離した蒸気
から電子を取り除き、前記基板近傍の前記区画室
内のイオン化率を高めるようにしたことを特徴と
するイオンプレーテイング装置。 An evaporation source for a deposition substance and a substrate are provided facing each other in a vacuum chamber having a gas introduction system, and an electron collecting electrode capable of applying a positive potential is arranged so as to form a compartment around the evaporation source. By applying a positive potential to the electron collecting electrode, electrons are removed from the vapor evaporated from the evaporation source, ionized, and separated into positive ions and electrons, thereby increasing the ionization rate in the compartment near the substrate. Features of ion plating equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986096819U JPS6350289Y2 (en) | 1986-06-26 | 1986-06-26 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986096819U JPS6350289Y2 (en) | 1986-06-26 | 1986-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS637158U true JPS637158U (en) | 1988-01-18 |
JPS6350289Y2 JPS6350289Y2 (en) | 1988-12-23 |
Family
ID=30963018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986096819U Expired JPS6350289Y2 (en) | 1986-06-26 | 1986-06-26 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6350289Y2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4990685A (en) * | 1972-12-29 | 1974-08-29 |
-
1986
- 1986-06-26 JP JP1986096819U patent/JPS6350289Y2/ja not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4990685A (en) * | 1972-12-29 | 1974-08-29 |
Also Published As
Publication number | Publication date |
---|---|
JPS6350289Y2 (en) | 1988-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0568545B2 (en) | ||
AU5022496A (en) | An electron jet vapor deposition system | |
JPS637158U (en) | ||
JPS6251735U (en) | ||
JPS6311560U (en) | ||
JPH0186054U (en) | ||
JPH0379153U (en) | ||
JPS57161059A (en) | Film forming device | |
JP2637947B2 (en) | Beam plasma type ion gun | |
JPS62101860U (en) | ||
JPS62182970U (en) | ||
JPS62157968U (en) | ||
JPS63115063U (en) | ||
JPH03177567A (en) | Vacuum deposition device | |
JPS57171666A (en) | Thin film vapor-deposition device | |
JPS63170458U (en) | ||
JPS61176763U (en) | ||
JPS61161948U (en) | ||
JPS6410066U (en) | ||
JPS6159661U (en) | ||
JPH0297664A (en) | Ultrahigh-purity film forming apparatus | |
JPS61187373U (en) | ||
JPS60193657U (en) | Ion source for mass spectrometers, etc. | |
JPH0322063U (en) | ||
JPS60244018A (en) | Cluster ion beam evaporation device |