JPS61159737A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61159737A
JPS61159737A JP16285A JP16285A JPS61159737A JP S61159737 A JPS61159737 A JP S61159737A JP 16285 A JP16285 A JP 16285A JP 16285 A JP16285 A JP 16285A JP S61159737 A JPS61159737 A JP S61159737A
Authority
JP
Japan
Prior art keywords
mask material
substrate
etching
layer mask
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571129B2 (enrdf_load_html_response
Inventor
Masakatsu Kimizuka
君塚　正勝
Toshitaka Shibata
柴田　俊隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16285A priority Critical patent/JPS61159737A/ja
Publication of JPS61159737A publication Critical patent/JPS61159737A/ja
Publication of JPH0571129B2 publication Critical patent/JPH0571129B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP16285A 1985-01-07 1985-01-07 半導体装置の製造方法 Granted JPS61159737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16285A JPS61159737A (ja) 1985-01-07 1985-01-07 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16285A JPS61159737A (ja) 1985-01-07 1985-01-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61159737A true JPS61159737A (ja) 1986-07-19
JPH0571129B2 JPH0571129B2 (enrdf_load_html_response) 1993-10-06

Family

ID=11466340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16285A Granted JPS61159737A (ja) 1985-01-07 1985-01-07 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61159737A (enrdf_load_html_response)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346252A (ja) * 1989-07-03 1991-02-27 American Teleph & Telegr Co <Att> 半導体集積回路の製造方法
US6027983A (en) * 1994-06-02 2000-02-22 Hitachi, Ltd. Method of manufacturing trench isolate semiconductor integrated circuit device
US11982888B2 (en) 2021-05-27 2024-05-14 Kyocera Corporation Nonreciprocal waveguide, isolator, optical switch, optical transceiver, data center, and manufacturing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240142402A1 (en) 2022-10-28 2024-05-02 Arkray, Inc. Method for analyzing sample comprising hemoglobin a2 by capillary electrophoresis

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346252A (ja) * 1989-07-03 1991-02-27 American Teleph & Telegr Co <Att> 半導体集積回路の製造方法
US6027983A (en) * 1994-06-02 2000-02-22 Hitachi, Ltd. Method of manufacturing trench isolate semiconductor integrated circuit device
US6432799B1 (en) 1994-06-02 2002-08-13 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US6649487B2 (en) 1994-06-02 2003-11-18 Hitachi, Ltd. Method of manufacturing semiconductor integrated circuit device
US11982888B2 (en) 2021-05-27 2024-05-14 Kyocera Corporation Nonreciprocal waveguide, isolator, optical switch, optical transceiver, data center, and manufacturing method

Also Published As

Publication number Publication date
JPH0571129B2 (enrdf_load_html_response) 1993-10-06

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term