JPS6115596B2 - - Google Patents
Info
- Publication number
- JPS6115596B2 JPS6115596B2 JP14908679A JP14908679A JPS6115596B2 JP S6115596 B2 JPS6115596 B2 JP S6115596B2 JP 14908679 A JP14908679 A JP 14908679A JP 14908679 A JP14908679 A JP 14908679A JP S6115596 B2 JPS6115596 B2 JP S6115596B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gate electrode
- epitaxial layer
- electrode
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8128—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate with recessed gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14908679A JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14908679A JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5671980A JPS5671980A (en) | 1981-06-15 |
| JPS6115596B2 true JPS6115596B2 (ko) | 1986-04-24 |
Family
ID=15467387
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14908679A Granted JPS5671980A (en) | 1979-11-15 | 1979-11-15 | Schottky barrier gate type field effect transistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671980A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143609A (ja) * | 1986-12-08 | 1988-06-15 | Nikon Corp | 移動体の位置決め装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2752663B2 (ja) * | 1988-11-01 | 1998-05-18 | 三菱電機株式会社 | 電界効果トランジスタの製造方法 |
| FR2685819A1 (fr) * | 1991-12-31 | 1993-07-02 | Thomson Composants Microondes | Procede de realisation d'un transistor a effet de champ hyperfrequence. |
| KR950034830A (ko) * | 1994-04-29 | 1995-12-28 | 빈센트 비. 인그라시아 | 전계 효과 트랜지스터 및 이 트랜지스터의 제조 방법 |
-
1979
- 1979-11-15 JP JP14908679A patent/JPS5671980A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143609A (ja) * | 1986-12-08 | 1988-06-15 | Nikon Corp | 移動体の位置決め装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5671980A (en) | 1981-06-15 |
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