JPS6115367A - ゲ−トタ−ンオフサイリスタの製造方法 - Google Patents

ゲ−トタ−ンオフサイリスタの製造方法

Info

Publication number
JPS6115367A
JPS6115367A JP59136087A JP13608784A JPS6115367A JP S6115367 A JPS6115367 A JP S6115367A JP 59136087 A JP59136087 A JP 59136087A JP 13608784 A JP13608784 A JP 13608784A JP S6115367 A JPS6115367 A JP S6115367A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
type
type semiconductor
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59136087A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550858B2 (enrdf_load_stackoverflow
Inventor
Mitsuo Kusano
草野　光男
Mitsuru Hanakura
満 花倉
Satoshi Ishibashi
石橋　聰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP59136087A priority Critical patent/JPS6115367A/ja
Publication of JPS6115367A publication Critical patent/JPS6115367A/ja
Publication of JPH0550858B2 publication Critical patent/JPH0550858B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 

Landscapes

  • Thyristors (AREA)
JP59136087A 1984-06-30 1984-06-30 ゲ−トタ−ンオフサイリスタの製造方法 Granted JPS6115367A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59136087A JPS6115367A (ja) 1984-06-30 1984-06-30 ゲ−トタ−ンオフサイリスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59136087A JPS6115367A (ja) 1984-06-30 1984-06-30 ゲ−トタ−ンオフサイリスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6115367A true JPS6115367A (ja) 1986-01-23
JPH0550858B2 JPH0550858B2 (enrdf_load_stackoverflow) 1993-07-30

Family

ID=15166948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59136087A Granted JPS6115367A (ja) 1984-06-30 1984-06-30 ゲ−トタ−ンオフサイリスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6115367A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287269A (ja) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan 半導体素子
JPH0279473A (ja) * 1988-09-14 1990-03-20 Meidensha Corp 半導体素子の製造方法
JPH06129286A (ja) * 1992-09-18 1994-05-10 Kohler Co 内燃機関の混合気制御システム
WO2007009284A1 (en) * 2005-07-22 2007-01-25 Abb Technology Ag Power semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519838A (en) * 1978-07-27 1980-02-12 Mitsubishi Electric Corp Three terminal control commutation element and its producing method
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor
JPS56158477A (en) * 1980-05-12 1981-12-07 Meidensha Electric Mfg Co Ltd Manufacture of gate turn off thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519838A (en) * 1978-07-27 1980-02-12 Mitsubishi Electric Corp Three terminal control commutation element and its producing method
JPS5680165A (en) * 1979-12-04 1981-07-01 Mitsubishi Electric Corp Gate turn-off thyristor
JPS56158477A (en) * 1980-05-12 1981-12-07 Meidensha Electric Mfg Co Ltd Manufacture of gate turn off thyristor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287269A (ja) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan 半導体素子
JPH0279473A (ja) * 1988-09-14 1990-03-20 Meidensha Corp 半導体素子の製造方法
JPH06129286A (ja) * 1992-09-18 1994-05-10 Kohler Co 内燃機関の混合気制御システム
WO2007009284A1 (en) * 2005-07-22 2007-01-25 Abb Technology Ag Power semiconductor device
US7816706B2 (en) 2005-07-22 2010-10-19 Abb Technology Ag Power semiconductor device

Also Published As

Publication number Publication date
JPH0550858B2 (enrdf_load_stackoverflow) 1993-07-30

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