JPS6119104B2 - - Google Patents
Info
- Publication number
- JPS6119104B2 JPS6119104B2 JP54154309A JP15430979A JPS6119104B2 JP S6119104 B2 JPS6119104 B2 JP S6119104B2 JP 54154309 A JP54154309 A JP 54154309A JP 15430979 A JP15430979 A JP 15430979A JP S6119104 B2 JPS6119104 B2 JP S6119104B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phosphorus
- substrate
- type layer
- lifetime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052698 phosphorus Inorganic materials 0.000 claims description 75
- 239000011574 phosphorus Substances 0.000 claims description 75
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 68
- 239000004065 semiconductor Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 description 20
- 229910001385 heavy metal Inorganic materials 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 16
- 239000010931 gold Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 150000003017 phosphorus Chemical class 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- -1 phosphorus compound Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430979A JPS5678128A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15430979A JPS5678128A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5678128A JPS5678128A (en) | 1981-06-26 |
| JPS6119104B2 true JPS6119104B2 (enrdf_load_stackoverflow) | 1986-05-15 |
Family
ID=15581292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15430979A Granted JPS5678128A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678128A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0178703U (enrdf_load_stackoverflow) * | 1987-11-17 | 1989-05-26 | ||
| JPH05346102A (ja) * | 1992-06-11 | 1993-12-27 | Sailor Pen Co Ltd:The | 垂直エアシリンダの制御方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4826993B2 (ja) * | 2004-04-22 | 2011-11-30 | 信越半導体株式会社 | ｐ型シリコン単結晶ウェーハの製造方法 |
-
1979
- 1979-11-30 JP JP15430979A patent/JPS5678128A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0178703U (enrdf_load_stackoverflow) * | 1987-11-17 | 1989-05-26 | ||
| JPH05346102A (ja) * | 1992-06-11 | 1993-12-27 | Sailor Pen Co Ltd:The | 垂直エアシリンダの制御方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5678128A (en) | 1981-06-26 |
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