JPS61144846A - 大規模集積回路装置 - Google Patents

大規模集積回路装置

Info

Publication number
JPS61144846A
JPS61144846A JP59267177A JP26717784A JPS61144846A JP S61144846 A JPS61144846 A JP S61144846A JP 59267177 A JP59267177 A JP 59267177A JP 26717784 A JP26717784 A JP 26717784A JP S61144846 A JPS61144846 A JP S61144846A
Authority
JP
Japan
Prior art keywords
chip
layer
equivalent
region
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59267177A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566737B2 (enrdf_load_stackoverflow
Inventor
Tomotaka Saito
斉藤　智隆
Nobutaka Kitagawa
信孝 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59267177A priority Critical patent/JPS61144846A/ja
Publication of JPS61144846A publication Critical patent/JPS61144846A/ja
Publication of JPH0566737B2 publication Critical patent/JPH0566737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP59267177A 1984-12-18 1984-12-18 大規模集積回路装置 Granted JPS61144846A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267177A JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267177A JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Publications (2)

Publication Number Publication Date
JPS61144846A true JPS61144846A (ja) 1986-07-02
JPH0566737B2 JPH0566737B2 (enrdf_load_stackoverflow) 1993-09-22

Family

ID=17441173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267177A Granted JPS61144846A (ja) 1984-12-18 1984-12-18 大規模集積回路装置

Country Status (1)

Country Link
JP (1) JPS61144846A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01204461A (ja) * 1988-02-09 1989-08-17 Matsushita Electron Corp 半導体集積回路
JPH08162539A (ja) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd データ出力バッファ
JPH08330431A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体集積回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01204461A (ja) * 1988-02-09 1989-08-17 Matsushita Electron Corp 半導体集積回路
JPH08162539A (ja) * 1994-06-15 1996-06-21 Hyundai Electron Ind Co Ltd データ出力バッファ
JPH08330431A (ja) * 1995-05-31 1996-12-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0566737B2 (enrdf_load_stackoverflow) 1993-09-22

Similar Documents

Publication Publication Date Title
KR840000985A (ko) 반도체 집적회로 및 그 제조방법
JPH0758734B2 (ja) 絶縁ゲ−ト型セミカスタム集積回路
JPH03165061A (ja) 半導体集積回路装置
CN100514678C (zh) 在接合焊盘下的低电容静电放电保护结构
JPS61144846A (ja) 大規模集積回路装置
JPH0122733B2 (enrdf_load_stackoverflow)
JP2780896B2 (ja) 半導体集積回路の製造方法
JPS5856354A (ja) マスタ−スライスｌｓｉ
JP3010911B2 (ja) 半導体装置
JPS60231356A (ja) 相補形金属酸化膜半導体集積回路装置
JPH08186176A (ja) 半導体集積回路装置
JPH0357314A (ja) 半導体装置
JP3038896B2 (ja) 半導体装置
JPS60140842A (ja) 半導体装置
JP2634800B2 (ja) 半導体集積回路スタンダードセル
JPH0982928A (ja) マスタスライス集積回路
JPH0824177B2 (ja) 半導体装置
JPH0774252A (ja) 半導体集積回路
JPH0797620B2 (ja) 半導体集積回路
JPH0574945A (ja) セミカスタム集積回路
JPH0547944A (ja) 出力ドライバ回路
JPH0536774A (ja) マスタスライス型半導体集積回路装置
JPS59181028A (ja) 半導体集積回路装置
JPS6370439A (ja) 半導体集積装置
JPH05335308A (ja) 半導体集積回路装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term