JPS61144789A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS61144789A
JPS61144789A JP59266837A JP26683784A JPS61144789A JP S61144789 A JPS61144789 A JP S61144789A JP 59266837 A JP59266837 A JP 59266837A JP 26683784 A JP26683784 A JP 26683784A JP S61144789 A JPS61144789 A JP S61144789A
Authority
JP
Japan
Prior art keywords
data
section
storage section
storage
volatile storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59266837A
Other languages
Japanese (ja)
Inventor
Hiroshi Tomita
弘 富田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59266837A priority Critical patent/JPS61144789A/en
Publication of JPS61144789A publication Critical patent/JPS61144789A/en
Pending legal-status Critical Current

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  • Static Random-Access Memory (AREA)
  • Memory System (AREA)

Abstract

PURPOSE:To simplify constitution of a device by providing a controlling section between a semiconductor storage device provided with volatile and nonvolatile storage sections and a higher device and thereby transferring data between the storage device and higher device, and at the same time, transferring data between the two storage sections. CONSTITUTION:A semiconductor storage device is constituted of a controlling section 100, a volatile storage section 110 and a nonvolatile storage section 120. The controlling section 100 writes data transferred from a higher device through a signal line 150 in the storage section 110 or 120 through signal lines 152, 154. The controlling section 100 reads data written in storage section 110, 120 in signal lines 153, 155 and transfers the data to the higher device through a signal line 151. when there are data in data stored in the storage section 110 that need preservation, the data are stored in the storage section 120 through the signal lines 153, 155 under the control of the controlling section 100. Thus, the constitution of the device is simplified making the controlling section only one.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、揮発性記憶部と不揮発性記憶部とから成る半
導体記憶装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor memory device comprising a volatile memory section and a nonvolatile memory section.

（従来の技術） 従来技術による半導体記憶装置は、例えば以下のような
ものであった。すなわち、第２図に示すように従来技術
による半導体記憶装置は、制御部２００によって信号線
２６０を介して上位装置から送られてきたデータを信号
線２６２を介して揮発性記憶部２２０に書込み、信号＃
２６３を介して揮発性記憶部２２０から読出したデータ
を信号線２６１を介して上位装置に送ることができるよ
うに構成したものである。(Prior Art) A semiconductor memory device according to the prior art is as follows, for example. That is, as shown in FIG. 2, in the conventional semiconductor memory device, the control section 200 writes data sent from the host device via the signal line 260 to the volatile storage section 220 via the signal line 262. signal#
The configuration is such that data read from the volatile storage unit 220 via the H.263 can be sent to the host device via the signal line 261.

しかし、障害などによって電源が落ちてしまった場合に
は、揮発性記憶部２２０では記憶しておいたデータが消
失してしまうので、データの保存が必要なときには制御
部２１０を駆動させている。However, if the power is cut off due to a failure or the like, the data stored in the volatile storage section 220 will be lost, so the control section 210 is driven when data needs to be saved.

制御部２１０は揮発性記憶部２２０に書込まれたデータ
を信号線２６４を介して読出し、信号線２５６を介して
不揮発性記憶部２．５０に書込み、信号線２５６を介し
て不揮発性記憶部２３０からデータを読出すことができ
るように構成したものである。The control unit 210 reads the data written in the volatile storage unit 220 via the signal line 264, writes it into the nonvolatile storage unit 2.50 via the signal line 256, and writes the data to the nonvolatile storage unit 2.50 via the signal line 256. The configuration is such that data can be read from 230.

（発明が解決しようとする問題点） したがって、上記構成ではデータを保存しておくため揮
発性記憶部２２０に加えて不揮発性記憶部２３０にもア
クセスするためＫは制御部２００と制御部２１０との二
つを備えることになってコスト高となっていた。(Problem to be Solved by the Invention) Therefore, in the above configuration, in order to save data, K accesses the non-volatile storage unit 230 in addition to the volatile storage unit 220, so K is connected to the control unit 200 and the control unit 210. The cost was high because it had to be equipped with two components.

本発明の目的は、揮発性記憶部および不揮発性記憶部か
ら成る記憶装置と上位装置との間でデータを転送し、さ
らに上記揮発性記憶部と上記不揮発性記憶部との間でも
データを転送することができるように制御するととＫよ
り上記欠点を除去し、低コストに構成した半導体記憶装
置を提供することにある。An object of the present invention is to transfer data between a storage device consisting of a volatile storage section and a nonvolatile storage section and a host device, and further transfer data between the volatile storage section and the nonvolatile storage section. The object of the present invention is to eliminate the above-mentioned drawbacks and to provide a semiconductor memory device constructed at low cost.

（問題点を解決するための手段） 本発明による半導体記憶装置は揮発性記憶部と、不揮発
性記憶部と、制御部とを備えて構成したものである。(Means for Solving the Problems) A semiconductor memory device according to the present invention includes a volatile storage section, a nonvolatile storage section, and a control section.

揮発性記憶部はデータを一時的に記憶するためのもので
あり、不揮発性記憶部はデータを保存することもできる
ものである。The volatile storage section is for temporarily storing data, and the nonvolatile storage section is also for storing data.

制御部は、上位装置よシ送られてきたデータを揮発性記
憶部および不揮発性記憶部に書込み、揮発性記憶部およ
び不揮発性記憶部から読出したデータを上位装置へ送出
し、さらに揮発性記憶部と不揮発性記憶部との間でデー
タの転送を制御するためのものである。The control unit writes the data sent from the host device to the volatile storage section and the nonvolatile storage section, sends the data read from the volatile storage section and the nonvolatile storage section to the host device, and then writes the data sent from the volatile storage section to the volatile storage section. This is for controlling data transfer between the storage unit and the nonvolatile storage unit.

（実施例） 次に、本発明について図面を参照して詳細に説明する。(Example) Next, the present invention will be explained in detail with reference to the drawings.

本発明の一実施例を示す第１図において、本発明による
半導体記憶装置は制御部１００と、揮発性記憶部１１０
と、不揮発性記憶部１２０とから構成されている。制御
部１００は信号線１５０を介して上位装置より送られて
きたデータを信２号線１５２を介して揮発性記憶部１１
０に書込み、信号線１５４を介して不揮発性記憶部１２
０にも書込むことができる。また、揮発性記憶部１１０
に書込まれたデータを上位装置に送るときは、制御部１
００は信号線１６３を介して読出したデータを信号線１
５１を介して送出する。不揮発性記憶部１２０に書込ま
れたデータを上位装置に送るときには、制御部１００は
信号線１５５を介して読出したデータを信号線１５１を
介して送出する。In FIG. 1 showing an embodiment of the present invention, a semiconductor memory device according to the present invention includes a control section 100 and a volatile memory section 110.
and a nonvolatile storage unit 120. The control unit 100 transfers data sent from the host device via the signal line 150 to the volatile storage unit 11 via the signal line 2 152.
Write to 0 and write to the nonvolatile storage unit 12 via the signal line 154.
It can also be written to 0. In addition, the volatile storage unit 110
When sending the data written to the controller to the host device, the control unit 1
00 is the data read out via the signal line 163 to the signal line 1.
51. When sending the data written in the nonvolatile storage section 120 to the host device, the control section 100 sends the data read out via the signal line 155 via the signal line 151.

すなわち、制御部１００は揮発性記憶部１１０ヘアクセ
スすることなく、上位装置と不揮発性記憶部１２０との
間でデータ転送を行うことができる。That is, the control unit 100 can transfer data between the host device and the nonvolatile storage unit 120 without accessing the volatile storage unit 110.

さらに、上位装置より送られてきたデータを保存したい
ときには、制御部１００は信号線１５５を介して揮発性
記憶部１１Ｇから読出したデータを信号線１５４を介し
て不揮発性記憶部１２０に書込むことができる。Furthermore, when it is desired to save the data sent from the host device, the control unit 100 writes the data read from the volatile storage unit 11G via the signal line 155 to the nonvolatile storage unit 120 via the signal line 154. Can be done.

本実施例ではデータ転送線を単方向（（！号線１５０−
１５１．信号線１６２−１６！、信号線１５４−１５５
．）として取扱ったが、本発明は双方向性の信号も含む
ものであることは勿論である。In this embodiment, the data transfer line is unidirectional ((! line 150-
151. Signal line 162-16! , signal lines 154-155
．． ), it goes without saying that the present invention also includes bidirectional signals.

（発明の効果） 本発明には以上説明したように、揮発性記憶部および不
揮発性記憶部を含む記憶装置と上位装置との間でデータ
を転送すると共に、揮発性記憶部と不揮発性記憶部との
間でもデータの転送を制御できるように構成することに
より、コストが著しく低減できるという効果がある。(Effects of the Invention) As described above, the present invention includes a method for transferring data between a storage device including a volatile storage section and a nonvolatile storage section and a host device, and a system for transferring data between a volatile storage section and a nonvolatile storage section. By configuring the system so that data transfer can be controlled even between the two, there is an effect that costs can be significantly reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明による半導体記憶装置の一実施例を示
すブロック図である。 第２図は、従来技術による半導体記憶装置の一例を示す
ブロック図である。FIG. 1 is a block diagram showing an embodiment of a semiconductor memory device according to the present invention. FIG. 2 is a block diagram showing an example of a semiconductor memory device according to the prior art.

Claims (1)

【特許請求の範囲】[Claims] 　データを一時的に記憶するための揮発性記憶部と、前
記データを保存することもできる不揮発性記憶部と、上
位装置より送られてきたデータを前記揮発性記憶部およ
び前記不揮発性記憶部に書込み、前記揮発性記憶部およ
び前記不揮発性記憶部から読出したデータを上位装置へ
送出し、さらに前記揮発性記憶部と前記不揮発性記憶部
との間でデータの転送を制御するための制御部とを具備
して構成したことを特徴とする半導体記憶装置。A volatile storage section for temporarily storing data, a nonvolatile storage section that can also store the data, and data sent from a host device to the volatile storage section and the nonvolatile storage section. a control unit for writing, sending data read from the volatile storage unit and the nonvolatile storage unit to a host device, and further controlling data transfer between the volatile storage unit and the nonvolatile storage unit; A semiconductor memory device comprising:
JP59266837A 1984-12-18 1984-12-18 Semiconductor storage device Pending JPS61144789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59266837A JPS61144789A (en) 1984-12-18 1984-12-18 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59266837A JPS61144789A (en) 1984-12-18 1984-12-18 Semiconductor storage device

Publications (1)

Publication Number Publication Date
JPS61144789A true JPS61144789A (en) 1986-07-02

Family

ID=17436345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59266837A Pending JPS61144789A (en) 1984-12-18 1984-12-18 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS61144789A (en)

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