JPS61138619A - 半導体封止用エポキシ樹脂組成物 - Google Patents
半導体封止用エポキシ樹脂組成物Info
- Publication number
- JPS61138619A JPS61138619A JP26031884A JP26031884A JPS61138619A JP S61138619 A JPS61138619 A JP S61138619A JP 26031884 A JP26031884 A JP 26031884A JP 26031884 A JP26031884 A JP 26031884A JP S61138619 A JPS61138619 A JP S61138619A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- ion
- resin composition
- ions
- inorganic ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 24
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 24
- 239000000203 mixture Substances 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000007789 sealing Methods 0.000 title description 6
- 229910001410 inorganic ion Inorganic materials 0.000 claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 150000003624 transition metals Chemical class 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000005342 ion exchange Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 7
- 230000035939 shock Effects 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract description 3
- 238000013329 compounding Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 description 21
- -1 halogen ions Chemical class 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 6
- 239000003456 ion exchange resin Substances 0.000 description 6
- 229920003303 ion-exchange polymer Polymers 0.000 description 6
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 229910001868 water Inorganic materials 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000002747 voluntary effect Effects 0.000 description 2
- 241000370738 Chlorion Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 108010011222 cyclo(Arg-Pro) Proteins 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26031884A JPS61138619A (ja) | 1984-12-10 | 1984-12-10 | 半導体封止用エポキシ樹脂組成物 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26031884A JPS61138619A (ja) | 1984-12-10 | 1984-12-10 | 半導体封止用エポキシ樹脂組成物 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61138619A true JPS61138619A (ja) | 1986-06-26 |
| JPS6336614B2 JPS6336614B2 (enExample) | 1988-07-21 |
Family
ID=17346350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26031884A Granted JPS61138619A (ja) | 1984-12-10 | 1984-12-10 | 半導体封止用エポキシ樹脂組成物 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61138619A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63307763A (ja) * | 1987-06-09 | 1988-12-15 | Nitto Electric Ind Co Ltd | 半導体装置 |
| JPS6473651A (en) * | 1987-09-14 | 1989-03-17 | Nitto Denko Corp | Semiconductor device |
| JPS6473652A (en) * | 1987-09-14 | 1989-03-17 | Nitto Denko Corp | Semiconductor device |
| JPS6473748A (en) * | 1987-09-16 | 1989-03-20 | Nitto Denko Corp | Semiconductor device |
| JPS6473749A (en) * | 1987-09-16 | 1989-03-20 | Nitto Denko Corp | Semiconductor device |
| JPH01101658A (ja) * | 1987-10-15 | 1989-04-19 | Nitto Denko Corp | 半導体装置 |
| WO1992006138A1 (en) * | 1990-09-28 | 1992-04-16 | Dexter Electronic Materials Division Of Dexter Corporation | Flame retardant epoxy molding compound, method and encapsulated device |
| JPH05287054A (ja) * | 1992-04-07 | 1993-11-02 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物、その硬化物及び半導体装置 |
| US5338781A (en) * | 1988-10-17 | 1994-08-16 | Dexter Electronic Materials Division Of Dexter Corp. | Flame retardant epoxy molding compound for encapsulating a semiconductor device |
| WO1994020224A1 (en) * | 1993-03-01 | 1994-09-15 | The Dexter Corporation | Flame retardant epoxy molding compound |
| US5413861A (en) * | 1988-10-17 | 1995-05-09 | Dextor Corporation | Semiconductor device encapsulated with a flame retardant epoxy molding compound |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59170173A (ja) * | 1983-03-18 | 1984-09-26 | Toagosei Chem Ind Co Ltd | 封着剤 |
-
1984
- 1984-12-10 JP JP26031884A patent/JPS61138619A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59170173A (ja) * | 1983-03-18 | 1984-09-26 | Toagosei Chem Ind Co Ltd | 封着剤 |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63307763A (ja) * | 1987-06-09 | 1988-12-15 | Nitto Electric Ind Co Ltd | 半導体装置 |
| JPS6473651A (en) * | 1987-09-14 | 1989-03-17 | Nitto Denko Corp | Semiconductor device |
| JPS6473652A (en) * | 1987-09-14 | 1989-03-17 | Nitto Denko Corp | Semiconductor device |
| JPS6473748A (en) * | 1987-09-16 | 1989-03-20 | Nitto Denko Corp | Semiconductor device |
| JPS6473749A (en) * | 1987-09-16 | 1989-03-20 | Nitto Denko Corp | Semiconductor device |
| JPH01101658A (ja) * | 1987-10-15 | 1989-04-19 | Nitto Denko Corp | 半導体装置 |
| US5413861A (en) * | 1988-10-17 | 1995-05-09 | Dextor Corporation | Semiconductor device encapsulated with a flame retardant epoxy molding compound |
| US5476716A (en) * | 1988-10-17 | 1995-12-19 | The Dexter Corporation | Flame retardant epoxy molding compound, method and encapsulated device |
| US5338781A (en) * | 1988-10-17 | 1994-08-16 | Dexter Electronic Materials Division Of Dexter Corp. | Flame retardant epoxy molding compound for encapsulating a semiconductor device |
| WO1992006138A1 (en) * | 1990-09-28 | 1992-04-16 | Dexter Electronic Materials Division Of Dexter Corporation | Flame retardant epoxy molding compound, method and encapsulated device |
| US5420178A (en) * | 1990-09-28 | 1995-05-30 | Dexter Electronics Materials Division, Dexter Corporation | Flame-retardant epoxy molding compound |
| JPH05287054A (ja) * | 1992-04-07 | 1993-11-02 | Shin Etsu Chem Co Ltd | 液状エポキシ樹脂組成物、その硬化物及び半導体装置 |
| WO1994020224A1 (en) * | 1993-03-01 | 1994-09-15 | The Dexter Corporation | Flame retardant epoxy molding compound |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6336614B2 (enExample) | 1988-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61138619A (ja) | 半導体封止用エポキシ樹脂組成物 | |
| US6190787B1 (en) | Epoxy resin compositions for encapsulating semiconductors, and semiconductor devices | |
| CN110217993B (zh) | 一种环保型低温封接玻璃及其制备方法 | |
| JP4337411B2 (ja) | 無機陰イオン交換体およびそれを用いた電子部品封止用エポキシ樹脂組成物 | |
| US4716184A (en) | Epoxy resin encapsulating composition with enhanced moisture resistance and method for producing the same | |
| CN100595171C (zh) | 一种大功率管无铅封接玻璃粉及制备方法 | |
| JPS5829858A (ja) | 電子部品封止用樹脂組成物 | |
| JPS63245947A (ja) | 半導体装置 | |
| CN101407374A (zh) | 一种电子浆料无铅低熔点介质玻璃及制备方法 | |
| JPS61163923A (ja) | エポキシ樹脂組成物 | |
| JP3088435B2 (ja) | 半導体装置 | |
| JPS61228058A (ja) | 半導体封止用エポキシ樹脂組成物 | |
| JPS63146917A (ja) | 半導体封止用エポキシ樹脂組成物 | |
| JP2757938B2 (ja) | 半導体装置 | |
| JPS61285242A (ja) | エポキシ樹脂組成物 | |
| JPH044328B2 (enExample) | ||
| JPS60226147A (ja) | 電子部品 | |
| JPS62192444A (ja) | 半導体封止用エポキシ樹脂成形材料 | |
| JPH01206656A (ja) | 半導体装置 | |
| JP2568584B2 (ja) | 半導体装置 | |
| JP2001226565A (ja) | 半導体装置 | |
| JPS5975921A (ja) | エポキシ樹脂組成物 | |
| JPH0362845A (ja) | 半導体封止用樹脂組成物 | |
| JP2568581B2 (ja) | 半導体装置 | |
| JPH01157558A (ja) | 半導体装置 |