JPS61138257A - マスク基板 - Google Patents
マスク基板Info
- Publication number
- JPS61138257A JPS61138257A JP59261512A JP26151284A JPS61138257A JP S61138257 A JPS61138257 A JP S61138257A JP 59261512 A JP59261512 A JP 59261512A JP 26151284 A JP26151284 A JP 26151284A JP S61138257 A JPS61138257 A JP S61138257A
- Authority
- JP
- Japan
- Prior art keywords
- mask substrate
- mask
- film
- substrate according
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261512A JPS61138257A (ja) | 1984-12-10 | 1984-12-10 | マスク基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261512A JPS61138257A (ja) | 1984-12-10 | 1984-12-10 | マスク基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61138257A true JPS61138257A (ja) | 1986-06-25 |
| JPS6339893B2 JPS6339893B2 (enExample) | 1988-08-08 |
Family
ID=17362930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59261512A Granted JPS61138257A (ja) | 1984-12-10 | 1984-12-10 | マスク基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61138257A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2664959A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask |
| EP2664960A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Photomask Blank, Method For Manufacturing Photomask, And Method For Manufacturing Phase Shift Mask |
| EP2664961A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for manufacturing photomask |
| JP2014016640A (ja) * | 2013-09-24 | 2014-01-30 | Dainippon Printing Co Ltd | フォトマスクブランクス |
| JP2015135513A (ja) * | 2015-03-06 | 2015-07-27 | 大日本印刷株式会社 | フォトマスクブランクス |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319939A (en) * | 1976-08-09 | 1978-02-23 | Hitachi Ltd | Structure of photoomasks |
| JPS5421273A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Manufacture for photo mask |
| JPS5432143A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Etching process |
| JPS55161242A (en) * | 1979-06-01 | 1980-12-15 | Ibm | Mask for particle beam or x ray |
| JPS5849945A (ja) * | 1981-08-31 | 1983-03-24 | Konishiroku Photo Ind Co Ltd | ホトマスク素材の製造方法 |
-
1984
- 1984-12-10 JP JP59261512A patent/JPS61138257A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5319939A (en) * | 1976-08-09 | 1978-02-23 | Hitachi Ltd | Structure of photoomasks |
| JPS5421273A (en) * | 1977-07-19 | 1979-02-17 | Mitsubishi Electric Corp | Manufacture for photo mask |
| JPS5432143A (en) * | 1977-08-17 | 1979-03-09 | Hitachi Ltd | Etching process |
| JPS55161242A (en) * | 1979-06-01 | 1980-12-15 | Ibm | Mask for particle beam or x ray |
| JPS5849945A (ja) * | 1981-08-31 | 1983-03-24 | Konishiroku Photo Ind Co Ltd | ホトマスク素材の製造方法 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2664959A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask |
| EP2664960A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Photomask Blank, Method For Manufacturing Photomask, And Method For Manufacturing Phase Shift Mask |
| EP2664961A1 (en) | 2012-05-16 | 2013-11-20 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for manufacturing photomask |
| KR20130128337A (ko) | 2012-05-16 | 2013-11-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 하프톤 위상 시프트 마스크 블랭크 및 하프톤 위상 시프트 마스크의 제조 방법 |
| KR20130128338A (ko) | 2012-05-16 | 2013-11-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크, 포토마스크의 제조 방법, 및 위상 시프트 마스크의 제조 방법 |
| EP2881791A1 (en) | 2012-05-16 | 2015-06-10 | Shin-Etsu Chemical Co., Ltd. | Merthod for manufacturing photomask |
| US9158192B2 (en) | 2012-05-16 | 2015-10-13 | Shin-Etsu Chemical Co., Ltd. | Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask |
| US9188852B2 (en) | 2012-05-16 | 2015-11-17 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, method for manufacturing photomask, and method for manufacturing phase shift mask |
| US9268212B2 (en) | 2012-05-16 | 2016-02-23 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and method for manufacturing photomask |
| JP2014016640A (ja) * | 2013-09-24 | 2014-01-30 | Dainippon Printing Co Ltd | フォトマスクブランクス |
| JP2015135513A (ja) * | 2015-03-06 | 2015-07-27 | 大日本印刷株式会社 | フォトマスクブランクス |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339893B2 (enExample) | 1988-08-08 |
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