JPS61138257A - マスク基板 - Google Patents

マスク基板

Info

Publication number
JPS61138257A
JPS61138257A JP59261512A JP26151284A JPS61138257A JP S61138257 A JPS61138257 A JP S61138257A JP 59261512 A JP59261512 A JP 59261512A JP 26151284 A JP26151284 A JP 26151284A JP S61138257 A JPS61138257 A JP S61138257A
Authority
JP
Japan
Prior art keywords
mask
mask substrate
film
layer
substrate according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59261512A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6339893B2 (enrdf_load_stackoverflow
Inventor
Yoshihide Kato
加藤　芳秀
Toshiaki Shinozaki
篠崎　俊昭
Kei Kirita
桐田　慶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59261512A priority Critical patent/JPS61138257A/ja
Publication of JPS61138257A publication Critical patent/JPS61138257A/ja
Publication of JPS6339893B2 publication Critical patent/JPS6339893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP59261512A 1984-12-10 1984-12-10 マスク基板 Granted JPS61138257A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59261512A JPS61138257A (ja) 1984-12-10 1984-12-10 マスク基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59261512A JPS61138257A (ja) 1984-12-10 1984-12-10 マスク基板

Publications (2)

Publication Number Publication Date
JPS61138257A true JPS61138257A (ja) 1986-06-25
JPS6339893B2 JPS6339893B2 (enrdf_load_stackoverflow) 1988-08-08

Family

ID=17362930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59261512A Granted JPS61138257A (ja) 1984-12-10 1984-12-10 マスク基板

Country Status (1)

Country Link
JP (1) JPS61138257A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2664959A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
EP2664960A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Photomask Blank, Method For Manufacturing Photomask, And Method For Manufacturing Phase Shift Mask
EP2664961A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for manufacturing photomask
JP2014016640A (ja) * 2013-09-24 2014-01-30 Dainippon Printing Co Ltd フォトマスクブランクス
JP2015135513A (ja) * 2015-03-06 2015-07-27 大日本印刷株式会社 フォトマスクブランクス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319939A (en) * 1976-08-09 1978-02-23 Hitachi Ltd Structure of photoomasks
JPS5421273A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for photo mask
JPS5432143A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Etching process
JPS55161242A (en) * 1979-06-01 1980-12-15 Ibm Mask for particle beam or x ray
JPS5849945A (ja) * 1981-08-31 1983-03-24 Konishiroku Photo Ind Co Ltd ホトマスク素材の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5319939A (en) * 1976-08-09 1978-02-23 Hitachi Ltd Structure of photoomasks
JPS5421273A (en) * 1977-07-19 1979-02-17 Mitsubishi Electric Corp Manufacture for photo mask
JPS5432143A (en) * 1977-08-17 1979-03-09 Hitachi Ltd Etching process
JPS55161242A (en) * 1979-06-01 1980-12-15 Ibm Mask for particle beam or x ray
JPS5849945A (ja) * 1981-08-31 1983-03-24 Konishiroku Photo Ind Co Ltd ホトマスク素材の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2664959A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
EP2664960A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Photomask Blank, Method For Manufacturing Photomask, And Method For Manufacturing Phase Shift Mask
EP2664961A1 (en) 2012-05-16 2013-11-20 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for manufacturing photomask
KR20130128338A (ko) 2012-05-16 2013-11-26 신에쓰 가가꾸 고교 가부시끼가이샤 포토마스크 블랭크, 포토마스크의 제조 방법, 및 위상 시프트 마스크의 제조 방법
KR20130128337A (ko) 2012-05-16 2013-11-26 신에쓰 가가꾸 고교 가부시끼가이샤 하프톤 위상 시프트 마스크 블랭크 및 하프톤 위상 시프트 마스크의 제조 방법
EP2881791A1 (en) 2012-05-16 2015-06-10 Shin-Etsu Chemical Co., Ltd. Merthod for manufacturing photomask
US9158192B2 (en) 2012-05-16 2015-10-13 Shin-Etsu Chemical Co., Ltd. Half-tone phase shift mask blank and method for manufacturing half-tone phase shift mask
US9188852B2 (en) 2012-05-16 2015-11-17 Shin-Etsu Chemical Co., Ltd. Photomask blank, method for manufacturing photomask, and method for manufacturing phase shift mask
US9268212B2 (en) 2012-05-16 2016-02-23 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for manufacturing photomask
JP2014016640A (ja) * 2013-09-24 2014-01-30 Dainippon Printing Co Ltd フォトマスクブランクス
JP2015135513A (ja) * 2015-03-06 2015-07-27 大日本印刷株式会社 フォトマスクブランクス

Also Published As

Publication number Publication date
JPS6339893B2 (enrdf_load_stackoverflow) 1988-08-08

Similar Documents

Publication Publication Date Title
US20220365414A1 (en) Protection layer on low thermal expansion material (ltem) substrate of extreme ultraviolet (euv) mask
JPS6385553A (ja) マスク基板およびマスクパタ−ンの形成方法
TW200844651A (en) Mask blank, method of manufacturing an exposure mask, and method of manufacturing an imprint template
TWI684062B (zh) 光罩基板（ｐｈｏｔｏｍａｓｋ ｂｌａｎｋ）、光罩之製造方法及遮罩圖案形成方法
JPS6339892B2 (enrdf_load_stackoverflow)
TW201003296A (en) Phase shift mask blank and method of manufacturing phase shift mask
TWI854972B (zh) 光罩基底、相偏移光罩及半導體裝置之製造方法
JPS61138257A (ja) マスク基板
JPS623257A (ja) マスクパタ−ンの形成方法およびこれに使用するマスク基板
TWI232495B (en) Manufacturing method of transfer mask substrate and transfer mask
JPH11125896A (ja) フォトマスクブランクス及びフォトマスク
JPH0463349A (ja) フォトマスクブランクおよびフォトマスク
JPS62257166A (ja) マスクパタ−ンの形成方法
JP2002303966A (ja) マスクの製造方法
JP2909317B2 (ja) フォトマスク
JP2003201559A (ja) スパッタターゲット、該スパッタターゲットを用いた位相シフトマスクブランク及び位相シフトマスクの製造方法
JPS61248048A (ja) パタ−ン転写用マスク
KR100258803B1 (ko) 반도체 소자의 미세 패턴 형성방법
JPS61204933A (ja) 半導体装置の製造方法
JPS62493B2 (enrdf_load_stackoverflow)
JP2745988B2 (ja) フォトマスクの製造方法
JPH0366656B2 (enrdf_load_stackoverflow)
JPH05281702A (ja) 位相シフトマスクの製造方法
JP2018151531A (ja) 転写用マスクの製造方法、および半導体デバイスの製造方法
JPS63157154A (ja) マスクパタ−ン形成方法