JPS61137365A - 光トリガ・光クエンチ静電誘導サイリスタ - Google Patents

光トリガ・光クエンチ静電誘導サイリスタ

Info

Publication number
JPS61137365A
JPS61137365A JP59259673A JP25967384A JPS61137365A JP S61137365 A JPS61137365 A JP S61137365A JP 59259673 A JP59259673 A JP 59259673A JP 25967384 A JP25967384 A JP 25967384A JP S61137365 A JPS61137365 A JP S61137365A
Authority
JP
Japan
Prior art keywords
region
conductivity type
impurity density
gate
low impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259673A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550861B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP59259673A priority Critical patent/JPS61137365A/ja
Publication of JPS61137365A publication Critical patent/JPS61137365A/ja
Publication of JPH0550861B2 publication Critical patent/JPH0550861B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP59259673A 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ Granted JPS61137365A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259673A JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259673A JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS61137365A true JPS61137365A (ja) 1986-06-25
JPH0550861B2 JPH0550861B2 (enrdf_load_stackoverflow) 1993-07-30

Family

ID=17337309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259673A Granted JPS61137365A (ja) 1984-12-08 1984-12-08 光トリガ・光クエンチ静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS61137365A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040043A (en) * 1988-10-12 1991-08-13 Nippon Telegraph And Telephone Corporation Power semiconductor device
WO2006048689A3 (en) * 2004-11-08 2006-10-19 Encesys Ltd Integrated circuits and power supplies
US8405248B2 (en) 2003-05-06 2013-03-26 Enecsys Limited Power supply circuits
US9425623B2 (en) 2003-05-06 2016-08-23 Solarcity Corporation Power supply circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5618578B2 (ja) * 2010-03-12 2014-11-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133773A (en) * 1975-05-16 1976-11-19 Hitachi Ltd Electric switch
JPS5563840A (en) * 1978-11-08 1980-05-14 Hitachi Ltd Semiconductor integrated device
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
JPS55162281A (en) * 1979-05-31 1980-12-17 Siemens Ag Light controlled thyristor
JPS5637676A (en) * 1979-09-05 1981-04-11 Hitachi Ltd Field effect type semiconductor switching device
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51133773A (en) * 1975-05-16 1976-11-19 Hitachi Ltd Electric switch
JPS5563840A (en) * 1978-11-08 1980-05-14 Hitachi Ltd Semiconductor integrated device
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
JPS55162281A (en) * 1979-05-31 1980-12-17 Siemens Ag Light controlled thyristor
JPS5637676A (en) * 1979-09-05 1981-04-11 Hitachi Ltd Field effect type semiconductor switching device
JPS5940576A (ja) * 1982-08-30 1984-03-06 Junichi Nishizawa フオトサイリスタ

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040043A (en) * 1988-10-12 1991-08-13 Nippon Telegraph And Telephone Corporation Power semiconductor device
US8405248B2 (en) 2003-05-06 2013-03-26 Enecsys Limited Power supply circuits
US9425623B2 (en) 2003-05-06 2016-08-23 Solarcity Corporation Power supply circuits
US10291032B2 (en) 2003-05-06 2019-05-14 Tesla, Inc. Power supply circuits
WO2006048689A3 (en) * 2004-11-08 2006-10-19 Encesys Ltd Integrated circuits and power supplies
US8077437B2 (en) 2004-11-08 2011-12-13 Enecsys Limited Integrated circuits and power supplies

Also Published As

Publication number Publication date
JPH0550861B2 (enrdf_load_stackoverflow) 1993-07-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees