JPS61137329A - 半導体の微細加工方法 - Google Patents

半導体の微細加工方法

Info

Publication number
JPS61137329A
JPS61137329A JP26029584A JP26029584A JPS61137329A JP S61137329 A JPS61137329 A JP S61137329A JP 26029584 A JP26029584 A JP 26029584A JP 26029584 A JP26029584 A JP 26029584A JP S61137329 A JPS61137329 A JP S61137329A
Authority
JP
Japan
Prior art keywords
impurity concentration
electrode
substrate
siox
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26029584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434817B2 (enExample
Inventor
Kyoichi Ikeda
恭一 池田
Katsumi Isozaki
克巳 磯崎
Tetsuya Watanabe
哲也 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP26029584A priority Critical patent/JPS61137329A/ja
Publication of JPS61137329A publication Critical patent/JPS61137329A/ja
Publication of JPH0434817B2 publication Critical patent/JPH0434817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP26029584A 1984-12-10 1984-12-10 半導体の微細加工方法 Granted JPS61137329A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26029584A JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26029584A JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Publications (2)

Publication Number Publication Date
JPS61137329A true JPS61137329A (ja) 1986-06-25
JPH0434817B2 JPH0434817B2 (enExample) 1992-06-09

Family

ID=17346057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26029584A Granted JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Country Status (1)

Country Link
JP (1) JPS61137329A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5677204A (en) * 1995-10-17 1997-10-14 Mitsubishi Denki Kabushiki Kaisha Method of evaluating a thin film for use in semiconductor device
US5705027A (en) * 1995-04-18 1998-01-06 Mitsubishi Denki Kabushiki Kaisha Method of removing etching residues
US5850149A (en) * 1996-05-27 1998-12-15 Mitsubishi Denki Kabushiki Kaisha Evaluation method for semiconductor devices
JP2008078202A (ja) * 2006-09-19 2008-04-03 Yokogawa Electric Corp ボロン拡散型単結晶振動子及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130039A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130039A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705027A (en) * 1995-04-18 1998-01-06 Mitsubishi Denki Kabushiki Kaisha Method of removing etching residues
US5677204A (en) * 1995-10-17 1997-10-14 Mitsubishi Denki Kabushiki Kaisha Method of evaluating a thin film for use in semiconductor device
US5850149A (en) * 1996-05-27 1998-12-15 Mitsubishi Denki Kabushiki Kaisha Evaluation method for semiconductor devices
JP2008078202A (ja) * 2006-09-19 2008-04-03 Yokogawa Electric Corp ボロン拡散型単結晶振動子及びその製造方法

Also Published As

Publication number Publication date
JPH0434817B2 (enExample) 1992-06-09

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